Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films

Abstract

(PZTNi30) thin films for various thicknesses, ranging from 5 nm to 400 nm, were fabricated by pulsed laser deposition technique. Giant dielectric dispersion, low dielectric loss, large dielectric constant $1000-1500 from 100 Hz to 100 kHz, and diffused dielectric anomaly near 570-630 K were observed in PZTNi30 thin films. These films show well saturated ferroelectric hysteresis, with large remanent polarization. It also illustrated excellent optical transparency which decreased from 82 to 72% with increasing film thickness from 5 nm to 400 nm for the probe wavelengths ranging from 200 to 1100 nm. A decrease in direct bandgap (E g ) values from 4 eV to 3.4 eV and indirect-E g values from 3.5 eV to 2.9 eV were observed for PZTNi30 thin films with increase in film thickness from 5 nm to 400 nm, respectively. The direct and indirect bandgaps were discussed in context of film thickness and grain size effects. Our investigations on optical properties of PZTNi30 thin films suggest that bandgap can be modified as a function of film thickness which may be useful for readers working to develop novel candidates for ferroelectric photovoltaic. V C 2015 AIP Publishing LLC.

Coupling of photoelectric and triboelectric effects as an effective approach for PZT-based high-performance self-powered ultraviolet photodetector

“…Fig. 1g shows that the bandgap of the PZT film is approximately 3.2 eV, which is in agreement with previous reports in the literature [26]. Upon externally applied mechanical agitation, the UV-SPPD generates electrical signals by converting mechanical energy into electricity that is then measured and analyzed.…”

Exploring the Magnetoelectric Coupling at the Composite Interfaces of FE/FM/FE Heterostructures

“…All of the observed peaks were assigned to PFN and NZFO, corresponding to perovskite phase with the monoclinic and cubic phase crystal structure respectively 31,34 . In order to explore the effect of strain on the ferroelectric, magnetic and magnetoelectric properties of this heterostructure, the effective misfit strain was calculated 35 . Note that the LSAT substrate has a cubic crystal structure with the lattice parameter a = 3.868 Å, whereas bulk LNO has a rhombohedral crystal structure with the lattice parameter a = 3.838 Å.…”

Optical and dielectric studies on radio frequency sputtered Gd2O3 doped K0.5Na0.5NbO3 thin films for nonlinear photonic and microwave tunable device applications

“…In the present study, the E g calculated by assuming the allowed direct (m ¼ 2) electronic transition between valance band and conduction band. The E g value found to be decreases with rise in OMP due to the lowering of the interatomic distance, enhancement in the grain size, and increase of crystallinity [47,48]. The E g values of the KNN1G films are in the range of 4.20e4.30 eV and were slightly less compare to the pure KNN (4.29e4.37 eV) thin films [14].…”