Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

Jutzi, M.; Berroth, Manfred; Wohl, Gregory R.; Oehme, Michael; Kasper, E.

doi:10.1109/lpt.2005.848546

Cited by 228 publications

(88 citation statements)

References 10 publications

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“…In this context, an attempt to fabricate device on Si based substrate is necessary with heteroepitaxial growth of pure Ge as an active material on Si substrate. On the other words, Ge growth on Si (Ge-on-Si) is more compatible with CMOS circuitry and Si based monolithic integration on a same chip because of its relatively straightforward fabrication technique when compared with free-standing bulk Ge substrate [10][11][12][13]. However, the reports on the detailed electrical transport characterstics using temperature dependent I-V characteristics of the graphene/Ge junctions that reveals the nature of the interface are quiet scarce.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar¹,

Kil²,

Shim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

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Section: Introductionmentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar¹,

Kil²,

Shim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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“…With higher reverse bias voltages, the dark current increases gradually but is still less than 150pA even at a reverse bias of 10V. This is several orders of magnitude lower than either Ge photodetectors reported in literature [10,[16][17][18][19][20][21] or the AlGaInAs quantum-well photodetector [26] on silicon demonstrated previously. We attribute this low dark current level to the mild and noninvasive wet etching of the i-InGaAs layer and the timely passivation of the etched sidewalls.…”

Section: Measurement Resultsmentioning

confidence: 60%

“…Germanium photodetectors integrated on SOI have been demonstrated for the wavelength range of 1.3µm and 1.5µm and have the advantage of complete compatibility with CMOS processes [10,[16][17][18][19][20][21]. However, their dark current is generally larger than for III-V photodetectors due to defects of Ge formed during the processing.…”

Section: Introductionmentioning

confidence: 99%

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides

et al. 2010

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InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40µm-long photodetector is 1.1A/W (excluding the coupling loss between the fiber and the SOI waveguide) at a wavelength of 1550nm and shows good linearity for an input power range of 40dB. Due to the large absorption coefficient of InGaAs and the efficient evanescent coupling, the fabricated photodetectors can cover the whole S, C and L communication bands. ©2010 Optical Society of America References and links1. R. Soref, and J. Lorenzo, "All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm," IEEE J. Quantum Electron. 22(6), 873-879 (1986). 2. R. Soref, and B. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron. 23(1), 123-129 (1987).

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“…Much work has been focused on vertical illumination Ge photodetectors and impressive results with frequency up to 39 GHz have been obtained [22][23][24]. We focused mainly on integrated photodetectors coupled to a silicon rib waveguide.…”

Section: Germanium Photodetectorsmentioning

confidence: 99%

Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer

Fédéli

Cioccio

Marris‐Morini

et al. 2008

Advances in Optical Technologies

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Recommended by Pavel ChebenPhotonics on CMOS is the integration of microelectronics technology and optics components to enable either improved functionality of the electronic circuit or miniaturization of optical functions. The integration of a photonic layer on an electronic circuit has been studied with three routes. For combined fabrication at the front end level, several building blocks using a silicon on insulator rib technology have been developed: slightly etched rib waveguide with low (0.1 dB/cm) propagation loss, a high speed and high responsivity Ge integrated photodetector and a 10 GHz Si modulators. Next, a wafer bonding of silicon rib and stripe technologies was achieved above the metallization layers of a CMOS wafer. Last, direct fabrication of a photonic layer at the back-end level was achieved using low-temperature processes with amorphous silicon waveguide (loss 5 dB/cm), followed by the molecular bonding of InP dice and by the processing in microelectronics environment of InP μsources and detector.

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Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

Cited by 228 publications

References 10 publications

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides

Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer

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