Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar, Zagarzusem; Kil, Yeon‐Ho; Shim, Kyu–Hwan; Cho, Hyunjin; Kim, Myung-Jong; Kim, Yong‐Tae; Choi, Chel‐Jong

doi:10.5573/jsts.2015.15.1.007

Cited by 19 publications

(8 citation statements)

References 30 publications

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“…J s is the saturation current density, which can be expressed by J s = A * T 2 exp(− e ϕ B0 / k B T ), where A * is the effective Richardson constant (∼66 A cm –2 K –2 for Ge) and ϕ B0 is the zero bias barrier height of the SLG/Ge/Si-tip junction. By using the J s value (4.2 × 10 –2 A cm –2 ), ϕ B0 of the SLG/Ge/Si-tip was estimated to be 0.48 V, which is very close to the value obtained from the SLG/bulk-Ge junction (0.46 V) and that from the SLG/Ge/planar-Si junction (0.42 V) . The slight variation can be related to the possible deviation of the experimental Richardson constant from the theoretical one. , …”

Section: Resultssupporting

confidence: 67%

“…By using the J s value (4.2 × 10 –2 A cm –2 ), ϕ B0 of the SLG/Ge/Si-tip was estimated to be 0.48 V, which is very close to the value obtained from the SLG/bulk-Ge junction (0.46 V) and that from the SLG/Ge/planar-Si junction (0.42 V) . The slight variation can be related to the possible deviation of the experimental Richardson constant from the theoretical one. , …”

Section: Resultssupporting

confidence: 67%

“…By using the J s value (4.2 × 10 −2 A cm −2 ), ϕ B0 of the SLG/Ge/Si-tip was estimated to be 0.48 V, which is very close to the value obtained from the SLG/bulk-Ge junction (0.46 V) 51 and that from the SLG/Ge/planar-Si junction (0.42 V). 54 The slight variation can be related to the possible deviation of the experimental Richardson constant from the theoretical one. 54,55 Furthermore, compared to the curve in the dark (black), the I−V curve of the device under illumination with a 532 nm laser (red) shows an evident photocurrent response in reverse bias.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns

Niu

Capellini

Łupina

et al. 2016

ACS Appl. Mater. Interfaces

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Dislocation networks are one of the most principle sources deteriorating the performances of devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a technique enabling fully coherent Ge islands selectively grown on nano-tip patterned Si (001) substrates. The Si-tip patterned substrate, fabricated by complementary metal-oxidesemiconductor (CMOS) compatible nanotechnology, features ~50 nm wide Si areas emerging from a SiO 2 matrix and arranged in an ordered lattice. Molecular beam epitaxy (MBE) growths result in Ge nano-islands with high selectivity and having homogeneous shape and size. The ~850°C growth temperature required for ensuring selective growth has been shown to lead to the formation of Ge islands of high crystalline quality without extensive Si intermixing (with 91 at.% Ge). Nano-tip patterned wafers result in geometric, kinetic diffusion barrier intermixing hindrance confining the major intermixing to the pedestal region of Ge islands where kinetic diffusion barriers are however high. Theoretical calculations suggest that the thin SiGe layer at the interface plays nevertheless a significant role in realizing our fully coherent Ge nano-islands free from extended defects especially dislocations. Single layer graphene (SLG)/Ge/Si-tip Schottky junctions were fabricated and thanks to the absence of extended defect in Ge islands, they demonstrate high performance photodetection characteristics with responsivity and I on /I off ratio of ~45 mA/W and ~10 3 , respectively.

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Section: Resultssupporting

confidence: 67%

Section: Resultssupporting

confidence: 67%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns

Niu

Capellini

Łupina

et al. 2016

ACS Appl. Mater. Interfaces

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“…Equation (5) shows that the ideality factor is inversely proportional to the temperature. The ideality factor significantly decreases with temperature only at low temperature and changes slowly when the temperature is over 300 K [28, 29]. However, as shown in Table 1, the reverse saturation current increases significantly with the temperature which is different from the ideality factor.…”

Section: Resultsmentioning

confidence: 99%

Current Rectification in a Structure: ReSe2/Au Contacts on Both Sides of ReSe2

et al. 2019

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Schottky effect of two-dimensional materials is important for nanoscale electrics. A ReSe2 flake is transferred to be suspended between an Au sink and an Au nanofilm. This device is initially designed to measure the transport properties of the ReSe2 flake. However, a rectification behavior is observed in the experiment from 273 to 340 K. The rectification coefficient is about 10. The microstructure and elements composition are systematically analyzed. The ReSe2 flake and the Au film are found to be in contact with the Si substrate from the scanning electron microscope image in slant view of 45°. The ReSe2/Si and Si/Au contacts are p-n heterojunction and Schottky contacts. Asymmetry of both contacts results in the rectification behavior. The prediction based on the thermionic emission theory agrees well with experimental data.

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“…10. Modified Richardson, ln(I 0 /T 2 )q 2 σ S Inhomogeneities of BH can be caused by poor interface quality, non-uniformity of surface states and dislocations, polymer layer thickness, some phase changes with temperature, and the energy band alignment of lowest molecular orbital of polymer with respect to the conduction band minimum of semiconductor [28,39,42,45,46]. Besides, the photopolymerization is not a homogeneous process.…”

Section: T Dependent I-v Analysismentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device

Özden

Avcı

Pakma

et al. 2022

J Inorg Organomet Polym

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A photopolymer based Al/NOA60/p-Si (metal-polymer-semiconductor) MPS device was fabricated and the current transport properties were investigated by using the forward bias current-voltage (I-V) characteristic in the temperature range of 80-300 K. The cross-sectional structure of polymer/semiconductor was revealed by the scanning electron microscope (SEM) image and it was seen that the NOA60 photopolymer was tidily coated on the p-Si surface. According to the I-V measurements at room temperature, the MPS device exhibits a good rectification ratio of 8140 at ±1V. Temperature-dependent I-V measurements (I-V-T) were analyzed on the basis of thermionic emission (TE) theory and an abnormal increase in zero-bias barrier height (BH) and a decrease in ideality factor (n) was observed with increasing temperature. Additionally, two different linear regions with distinct values from the theoretical value of the Richardson constant (A*) were observed in the conventional Richardson plot. Such deviations from ideal TE theory has been attributed to the effect of BH inhomogeneities.Gaussian distribution (GD) of BH model has applied the I-V-T results and double GD BH with mean values of 0.75±0.08 eV (80 -140 K) and 1.02±0.11 eV (140 -300 K) were calculated. Moreover, the A* value of 64.73 A/cm 2 K 2 was calculated close to the known value of p-Si from the modified Richardson plot. Thus, it has been concluded that the current transport of the Al/NOA60/p-Si MPS device can be explained by TE with double GD BH model for a wide temperature region.

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Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Cited by 19 publications

References 30 publications

Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns

Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns

Current Rectification in a Structure: ReSe2/Au Contacts on Both Sides of ReSe2

Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device

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