The temperature dependence of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of an Au/n-type Si Schottky barrier diode (SBD) with a PEDOT:PSS interlayer was investigated. The SBD parameters, such as Schottky barrier height () B ), ideality factor (n), saturation current (I 0 ), doping concentration (N D ), and series resistance (R s ), were obtained as a function of temperature. The Richardson constant (A**) obtained from the In(I o /T 2 ) versus 1000/T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height ( " È bo ) and standard deviation (· 0 ) calculated using the apparent Schottky barrier height () ap ) versus 1/2kT plot were 1.26 eV and 0.15 eV, respectively. From a fit of the modified Richardson plot of ln(I 0 /T 2
Abstract-We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.
Anhydrous silicophosphoric acid glass with an approximate composition of H5Si2P9O29 was synthesized and its thermal and proton‐conducting properties were characterized. Despite exhibiting a glass transition at 192 °C, the supercooled liquid could be handled as a solid up to 280 °C owing to its high viscosity. The glass and its melt exhibited proton conduction with a proton transport number of ∼1. Although covalent O−H bonds were weakened by relatively strong hydrogen bonding, the proton conductivity (4×10−4 S cm−1 at 276 °C) was considerably lower than that of phosphoric acid. The high viscosity of the melt was due to the tight cross‐linking of phosphate ion chains by six‐fold‐coordinated Si atoms. The low proton conductivity was attributed to the trapping of positively charged proton carriers around anionic SiO6 units (expressed as (SiO6/2)2−) to compensate for the negative charges.
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