Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

Abstract

The temperature dependence of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of an Au/n-type Si Schottky barrier diode (SBD) with a PEDOT:PSS interlayer was investigated. The SBD parameters, such as Schottky barrier height () B ), ideality factor (n), saturation current (I 0 ), doping concentration (N D ), and series resistance (R s ), were obtained as a function of temperature. The Richardson constant (A**) obtained from the In(I o /T 2 ) versus 1000/T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height ( " È bo ) and standard deviation (· 0 ) calculated using the apparent Schottky barrier height () ap ) versus 1/2kT plot were 1.26 eV and 0.15 eV, respectively. From a fit of the modified Richardson plot of ln(I 0 /T 2

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“…The results indicate that the junction device closes to an ideal diode towards the higher temperatures, such that the n value approached to unity at 460 K. Decrease in the ideality factor and increase in the BH with temperature imply the inhomogeneity of the BH in the contact [21]. Furthermore, the higher n values at lower tempratures specify the existence of AB interfacial layer which causes reconstruction of the interface nature between Co and n -Si, the presence of BH inhomogeneities at the interface, the interface states, and minority carrier injections at the interface [22,23]. At low temperatures, tunnelling current will be the dominant transport mechanism, and electrons surmount the lower barrier through tunnelling and then the measured BH will be lower [24].…”

“…The N SS values are in the range of 3.593 × 10 15 /cm 2 /eV to 1.398 × 10 15 /cm 2 /eV at 100 K and 3.466 × 10 15 /cm 2 /eV to 1.975 × 10 14 /cm 2 /eV at 460 K. This behavior of N SS is a result of decrease in recombination center and existence of the interfacial electronics states in the AB layer between Co and n -Si under the influence of temperature [22]. Additionally, in n -type semiconductors, the energy interface states with respect to the conduction band edge (E C –E SS ) are obtained as …”