Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications

Abstract

The temperature dependence of the current–voltage and room temperature capacitance–voltage measurements of Co/aniline blue/ n-Si sandwich-type rectifying device was investigated.Furthermore, the effects of the illumination on the current–voltage measurements were tested with 100 mW/cm2 light intensity, and it was seen that Co/aniline blue/ n-Si sandwich-type device showed a clear response to illumination, and it may be a candidate for solar cells or photodiode applications. The rectifying device parameters, such as the barrier height (Ф), the ideality factor ( n), the rectification ratio, and the series resistance ( Rs), were obtained as a function of temperature using thermionic emission, Cheung function, and Norde function. The interface state densities versus energy were obtained. The Richardson constant ( A*) obtained from the In( Io/ T2) versus 1000/ T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height[Formula: see text] and the standard deviation ( σo) were calculated using the apparent Schottky barrier height Фap versus 1/2 kT plot. So, it has been found to be 1.08 eV and 0.15 V (260–460 K) and 0.79 eV and 0.10 V (100–260 K), respectively. The results were discussed based on the presence of two Gaussian distributions of Фb potential in the contact area of Co/aniline blue/ n-Si/Al device.

Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures

“…The ideality factor, saturation current and barrier height values were calculated and resistance rather than more than unity (Cifci et al, 2018;Kacus et al, 2020) These results can be indicated to good response time according to literature (Hu et al, 2021). These results can be indicated to good response time according to literature (Hu et al, 2021).…”

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

“…This case may be described by the lateral inhomogeneity of BHs. [23][24][25][26][27][28][29][30] According to GD model, the formed of BH between semiconductor and Schottky contact hasn't homogenous and a mean-BH ECS Journal of Solid State Science and Technology, 2023 12 083010 ( B0 Φ ¯) is defined in Eq. 9a, depending on the standard-deviation S (σ ) of BH.…”

Electrical Behaviors of the Co‐ and Ni‐Based POMs Interlayered Schottky Photodetector Devices

“…The high ideality factor values at the Al/CoPOM/p‐Si and Al/NiPOM/p‐Si devices can be attributed to barrier inhomogeneity and interfacial POM layers as well as series resistance rather than more than unity. [ 50,51 ]…”

“…The The high ideality factor values at the Al/CoPOM/p-Si and Al/ NiPOM/p-Si devices can be attributed to barrier inhomogeneity and interfacial POM layers as well as series resistance rather than more than unity. [50,51] The threshold voltages of the Al/CoPOM/p-Si and Al/ NiPOM/p-Si devices were determined as 0.38 and 0.25 V under dark, respectively. The threshold voltage changes with changing light power have been shown in Figure S4a (Supporting Information).…”