The current-voltage (I-V) and capacitance-voltage (C-V ) characteristics of Au/n-GaAs contacts have been measured in the temperature range of 80-300 K. An abnormal decrease in the experimental BH b and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been attributed to the barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the metal-semiconductor interface. The temperature-dependent I -V characteristics of the Au/n-GaAs contact have shown a double Gaussian distribution giving mean barrier heights of 0.967 and 0.710 eV and standard deviations of 0.105 and 0.071 V, respectively. A modified ln(I 0 /T 2 ) − q 2 σ 2 s 2k 2 T 2 versus 1/T plot for the two temperature regions then gives ¯ b0 and A * as 0.976 and 0.703 eV, and 13.376 and 8.110 A cm −2 K −2 , respectively. Furthermore, a value of −0.674 meV K −1 for the temperature coefficient has been obtained, and the value of −0.674 meV K −1 for the Au/n-GaAs Schottky diode is in close agreement with those in the literature.

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