Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

Khurelbaatar, Zagarzusem; Kil, Yeon‐Ho; Yun, Hyung-Joong; Shim, Kyu–Hwan; Nam, Jung Tae; Kim, Keun Soo; Lee, Sang-Kwon; Choi, Chel‐Jong

doi:10.1016/j.jallcom.2014.06.132

Cited by 49 publications

(20 citation statements)

References 43 publications

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“…In recent years, graphene has been considered as a valuable material in both fundamental science and technology because it offers flexibility, mechanical robustness and chemical inertness combined with excellent electrical and optical properties. Khurelbaatar et al [8] observed that graphene is effective in depinning the Fermi level in Ge. Zheng et al [9] reported the fabrication of infrared photodetector based on graphene and bulk Ge Schottky junction, where monolayer graphene used as transparent electrode.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar¹,

Kil²,

Shim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

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Section: Introductionmentioning

confidence: 99%

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Khurelbaatar¹,

Kil²,

Shim³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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“…A C C E P T E D ACCEPTED MANUSCRIPT 3 Ge Schottky barrier diodes (SBDs) using current-voltage (I-V) and capacitance-voltage (C-V) characteristics, and demonstrated that the minimizing the Fermi-level pinning of Ge could be associated with the passivation of Ge surface by graphene [17].…”

Section: A N U S C R I P Tmentioning

confidence: 99%

Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

Khurelbaatar

Kang

Shim

et al. 2015

Journal of Alloys and Compounds

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“…Reduction of the SBH is particularly important for the realization of ohmic contacts or for impedance matching for spin injection [18,19]. In order to alleviate the FL pinning, different strategies such as Ge surface passivation through wet chemicals [20,21] or deposition of a thin insulator layer on Ge surfaces have been employed [22][23][24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

et al. 2019

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Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

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Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

Cited by 49 publications

References 43 publications

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

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