Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

Khurelbaatar, Zagarzusem; Kang, Min‐Sung; Shim, Kyu–Hwan; Yun, Hyung-Joong; Lee, Jouhan; Hong, Hyobong; Chang, Sung-Yong; Lee, Sung‐Nam; Choi, Chel‐Jong

doi:10.1016/j.jallcom.2015.08.031

Cited by 24 publications

(6 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This should not come as a surprise, as it is known that barrier inhomogeneity can lead to temperature-dependent energy barriers. 42,43 Below 100 K, the J−Vs are approximately temperature-independent and well described by the FN tunneling mechanism under the WKB (Wentzel−Kramers−Brillouin) approximation in the formula 30 where m is the effective mass of the electron in the semiconductor and ℏ is the reduced Plank constant. Here, the free electron mass is considered.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics

Oswald

Beretta

Stiefel

et al. 2023

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Among the family of 2D materials, graphene is the ideal candidate as top or interlayer electrode for hybrid van der Waals heterostructures made of organic thin films and 2D materials due to its high conductivity and mobility and its inherent ability of forming neat interfaces without diffusing in the adjacent organic layer. Understanding the charge injection mechanism at graphene/organic semiconductor interfaces is therefore crucial to develop organic electronic devices. In particular, Gr/C60 interfaces are promising building blocks for future n-type vertical organic transistors exploiting graphene as tunneling base electrode in a two back-to-back Gr/C60 Schottky diode configuration. This work delves into the charge transport mechanism across Au/C60/Gr vertical heterostructures fabricated on Si/SiO 2 using a combination of techniques commonly used in the semiconductor industry, where a resist-free CVD graphene layer functions as a top electrode. Temperature-dependent electrical measurements show that the transport mechanism is injection limited and occurs via Fowler− Nordheim tunneling at low temperature, while it is dominated by a nonideal thermionic emission at room and high temperatures, with energy barriers at room temperature of ca. 0.58 and 0.65 eV at the Gr/C60 and Au/C60 interfaces, respectively. Impedance spectroscopy confirms that the organic semiconductor is depleted, and the energy band diagram results in two electron blocking interfaces. The resulting rectifying nature of the Gr/C60 interface could be exploited in organic hot electron transistors and vertical organic permeable-base transistors.

show abstract

Section: ■ Results and Discussionmentioning

confidence: 99%

Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics

Oswald

Beretta

Stiefel

et al. 2023

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

“…The dissimilarity in the Richardson constant value may be associated with the inhomogeneous barrier heights, in which the lower barrier's path will be preferable for the current to pass through the Schottky interface. 41,42) An inhomogeneous Schottky interface could be seen as a layer consisting of patches with different Ø b . The distribution of Ø b .…”

Section: Electrical Characterizationmentioning

confidence: 99%

Gaussian distribution of inhomogeneous barrier height in nanocrystalline graphite (NCG)/p-Si Schottky diodes

Nawawi

Sultan

Rahman

et al. 2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Schottky characteristics of nanocrystalline graphite/p-Si junction were investigated using current-voltage measurements at various temperatures between 298 and 473 K. Using the thermionic emission theory, the extracted ideality factor reduces by 77% while Schottky barrier height increases by 46% with increasing temperature. The initial obtained value of Richardson constant, A* from this device was 7.92 × 10 −10 A cm −2 K −2 . This value is far smaller than the theoretical value of 32 A cm −2 K −2 for p-Si which indicates inhomogeneity of a barrier height at the device interface. The Gaussian distribution plot was employed to explain the barrier height inhomogeneity, which gives the mean barrier height and standard deviation of 1.23 eV and 0.19 eV, respectively. By including the Gaussian distribution, the analysis of a modified Richardson plot gives a mean barrier height of 1.25 eV and a Richardson constant of 31.09 A cm −2 K −2 , which are close to the theoretical values.

show abstract

“…Thus, the aim is to prevent diffusion in the M/S interface and to increase the quality of SDs by deactivating the interface states. [1][2][3][4] Polyvinyl alcohol (PVA) polymer, which is used frequently in the literature, is preferred by researchers due to its physical and chemical properties such as high water solubility, large crystalline range, processability, low cost and ease of production. 5,6 On the other hand, the low electrical conductivity of PVA can be increased up to 10 6 times with proper dopant material.…”

Section: Introductionmentioning

confidence: 99%

On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K

Baydilli

Kaymaz

Tecimer

et al. 2020

Journal of Elec Materi

View full text Add to dashboard Cite

Au/PVA/n-GaAs (MPS) type Schottky diodes (SDs) were fabricated and investigated in a temperature range of 80-360 K to explain their possible conduction mechanisms (CMs). Three distinct linear regions with different slopes were observed in ln(I)-V plots. The first region (R1), is within the range of 0.22-0.60 V, the second region (R2), is within the range of 0.64-0.90 V, and the third region (R3), is within the range of 1.1-1.5 V. It was shown that both ideality factor (n) and zero-bias barrier height (U Bo) are strong functions of temperature for all three regions. It was noticed that n values decreased and U Bo values increased with increasing temperature. In order to ascertain the possible CMs, U Bo À n, À U Bo À q/2kT, and (n À1 À 1) À q/2kT plots were also examined. In each of these plots, two linear regions were obtained within each of the three regions. The region from 80-180 K is called the low-temperature range (LTR), and the region from 200-360 K is called the high-temperature range (HTR). It has been revealed that the reason for the deviation from the classical thermionic emission (TE) theory cannot be explained only by the existence of the interface layer, interface states (N SS) or quantum mechanical tunneling mechanisms, which can be also explained by the double Gaussian distribution (DGD) due to barrier inhomogeneity. Finally, the experimental Richardson constants (A*) were calculated from the interception point of the modified Richardson curve in LTR and HTR for all three regions. It was calculated as 6.22 and 8.13 A/cm 2 K 2 for RI, 7.77 and 8.14 A/cm 2 K 2 at R2, and 7.07 and 8.13 A/cm 2 K 2 at R3 for low-and high-temperature ranges, respectively. It is clear that especially HTR results are quite close to the known theoretical A* value of 8.16 A/cm 2 K 2 for n-GaAs.

show abstract

Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

Cited by 24 publications

References 31 publications

Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics

Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics

Gaussian distribution of inhomogeneous barrier height in nanocrystalline graphite (NCG)/p-Si Schottky diodes

On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K

Contact Info

Product

Resources

About