Field-Dependent Central-Cell Corrections in GaAs by Laser Spectroscopy

Central-cell corrections for Si and S in GaAs in a strong magnetic field

“…2 that the field dependence of the central-cell correction as expressed in Eq. ͑1͒ following Fetterman et al 15 is in good agreement with the present experimental data.…”

“…While Michels et al 30 show line positions to 15 T, they give no values for chemical shift. Fetterman et al 15 give data for the difference in chemical shift for two unidentified donors, one of which is thought to have a negative central-cell correction. This data cannot be directly compared with the present results.…”

“…With increasing magnetic field the electron is squeezed into a smaller volume, increasing the effect. Fetterman et al 15 have pointed out that, using lowest order perturbation theory, the central-cell correction for a donor of species j may be written as…”

“…An early report gave the difference in chemical shift for two unidentified donors. 15 Other works have used this data 11 or simply a B 2 dependence 16 to model the effect. These reports are limited to fields below 7 T. Even less data are available at high magnetic fields.…”

Magneto‐Optic Studies of Donor Excitation Spectra in CdTe

“…Recent improvements in growth technique, particularly for epitaxial samples, have produced high-quality materials in which it has been possible to observe fine structure due to different donor species [8]. Although some of these central cell features were observed in portions of this work, this subject will only he treated briefly.…”