Photoelectric Spectroscopy – A New Method of Analysis of Impurities in Semiconductors

Kogan, Sh. M.; Lifshits, T. M.

doi:10.1002/pssa.2210390102

Cited by 163 publications

(15 citation statements)

References 35 publications

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“…The random electric fields of the ionized acceptors (e.g., Zn vacancies) will affect the shallow donor states. Still, the interaction with charged defects should result in a red-shift of the electronic transitions and can not therefore account for the experimental observations [31].…”

Section: A Electronic Transition Of H Bcmentioning

confidence: 96%

Interplay between interstitial and substitutional hydrogen donors in ZnO

2014

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A Raman study on hydrogen donors in ZnO reveals the properties of bond-centered hydrogen (H BC ) and hydrogen trapped in the oxygen vacancy (H O ). The donors are identified by their electronic 1s → 2s(2p) transitions and their characteristic local vibrational modes. The H O donor was detected preferentially below the sample surface, where a high oxygen vacancy concentration is generated by thermal treatment of the samples. H BC and H O exhibit different thermal stabilities and their concentrations depend strongly on the sample history. Molecular hydrogen is an essential part of the interplay of the two hydrogen donors.

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Section: A Electronic Transition Of H Bcmentioning

confidence: 96%

Interplay between interstitial and substitutional hydrogen donors in ZnO

2014

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“…Considering the anisotropic nature of the effective mass tensor of Si, we prepared two sets of samples for different experimental configurations: one for B || k || <111> and the other for B || k || <100>, with k being the wave vector of the incident infrared radiation and B the applied magnetic field. The experimental technique we employed here is the so-called photo-thermal ionization (PTI) spectroscopy, which has been proven to be particularly suitable for detecting ultra-low concentration impurities in semiconductor due to its high sensitivity and high resolution [11]. All measurements were taken at 17 K to get the best experimental sensitivity and signal-to-noise ratio.…”

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confidence: 99%

Magnetic Field Control of the Quantum Chaotic Dynamics of Hydrogen Analogs in an Anisotropic Crystal Field

et al. 2010

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We report magnetic field control of the quantum chaotic dynamics of hydrogen analogues in an anisotropic solid state environment. The chaoticity of the system dynamics was quantified by means of energy level statistics. We analyzed the magnetic field dependence of the statistical distribution of the impurity energy levels and found a smooth transition between the Poisson limit and the Wigner limit, i.e. transition between regular Poisson and fully chaotic Wigner dynamics. Effect of the crystal field anisotropy on the quantum chaotic dynamics, which manifests itself in characteristic transitions between regularity and chaos for different field orientations, was demonstrated.PACS numbers: 05.45. Mt, 05.45.Gg, The control and anti-control of chaos have been the subject of growing interdisciplinary interest in the past decades [1,2]. The possibility of controlling chaos is not only interesting from the point of view of fundamental physics, but also of immense practical importance. A number of techniques have been developed to control chaos since the seminal work of Ott, Grebogi, and Yorke [3], many of which have been verified experimentally and found applications in a wide variety of fields, e.g. in electronic circuits, non-linear optics, biological systems etc [1,2,4,5]. On the other hand, the presence of chaos in quantum mechanics (sometimes referred to as quantum chaos) has been demonstrated and can be found in quantum systems [6,7]. A large amount of work has been stimulated since its introduction in 1970s. However, understanding the underlying physics of such quantum chaotic systems and finding ways of controlling them remain a major scientific challenge in this field.Highly excited Rydberg atoms in strong magnetic fields are particularly suitable for studying the quantum manifestation of underlying chaotic dynamics, among which hydrogenic atoms received the most attention due to their physical simplicity and experimental feasibility [8]. However, our understanding of chaotic atoms is still far from being complete, not to mention chaotic atom analogues. The quantum manifestation of underlying chaotic dynamics and its control mechanism for atom analogues in solid state environment remain mysterious, despite their fundamental importance.It is now generally known that atom analogues can be well produced in a solid state environment [6]. Perhaps, the physically most appealing conservative system exhibiting underlying chaotic dynamics is the analogue of the hydrogen atom in a semiconductor crystal. Studies have shown that hydrogenlike shallow impurities in semiconductor resemble the energy level structures of the hydrogen atom but with a much smaller energy scale due to the small electron effective mass and large dielectric constants [6,9,10]. The impurity electron feels the external field much more sensitively than in real atoms and thus efficiencies for the control of chaos can be greatly enhanced. Another significant difference from real atoms in vacuum is that series of material parameters can be manipulated, e....

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“…However, after calculations of Lipari and Baldereschi [10] there exists a r~-state energetically almost coinciding with the 1~ -end state of the C-line. This I~ -state has been reported by Gershenzon [11], but it could never be detected by PTIS-measurements, although the resolution in these experiments has been sufficiently large (see references in [12]). This r~--state might appear at high magnetic fields or perhaps there might be some admixture with sublevels from this state.…”

Section: Magnetic Field (T)mentioning

confidence: 57%

Zeeman splitting of excited boron states in p-Ge

Jungwirt

Prettl

1989

Int J Infrared Milli Waves

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The photothermal spectrum of shallow acceptors in p-Ge has been investigated at various magnetic field strengths up to 5.6 T at a temperature of 7.5 K by FIR-Fourier-spectroscopy. From the observed Zeeman splittings of the excited states of the boron acceptor the coefficients of the linear and quadratic field dependence have been evaluated and g-factors of the D-, C-and the G-transitions have been determined based on a standard group theoretical approach.

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Photoelectric Spectroscopy – A New Method of Analysis of Impurities in Semiconductors

Cited by 163 publications

References 35 publications

Interplay between interstitial and substitutional hydrogen donors in ZnO

Interplay between interstitial and substitutional hydrogen donors in ZnO

Magnetic Field Control of the Quantum Chaotic Dynamics of Hydrogen Analogs in an Anisotropic Crystal Field

Zeeman splitting of excited boron states in p-Ge

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