Zeeman splitting of excited boron states in p-Ge

Jungwirt, G.; Prettl, Wilhelm

doi:10.1007/bf01010396

Cited by 4 publications

(1 citation statement)

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“…In 1979 Broecks et a1 performed quite similar experiments with Al acceptors but achieved a much higher resolution by using photothermal ionization spectroscopy. Jungwirt and Prettl (1989) extended some of these measurements to magnetic fields of about 6 T. For interpreting the data the theory of Bhattacharjee and Rodriguez (1972) was applied. This theory is based on symmetry considerations only, thus relating the Zeeman splitting for different field orientations to one another, but leaving the real g-values as adjustable parameters.…”

Section: Introductionmentioning

confidence: 99%

Zeeman levels of shallow acceptors in cubic semiconductors

Schmitt

Bangert

Landwehr

1991

J. Phys.: Condens. Matter

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A detailed theory for the Zeeman splitting of shallow acceptors in cubic semiconductors is presented, allowing for cubic contributions from the band stmct-, magnetic field orientations B 11 [OOl], [lll], [110] and large magnetic fields B.Practically exact solutions are achieved by taking the contributions of higher angular momenta into account. We calculate the Zeeman splitting of the ground state and the first excited odd-parity states. By also determining the probability for transitions between these states we succeed in a reasonable interpretation of the experimental results for Ge and GaAs. We tabulate g-values for *wide range of Lutt-parame.ters. A description of the Zeeman splitting in terms of a linear field dependence only proves to be accurate for limited field strengths.

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Section: Introductionmentioning

confidence: 99%

Zeeman levels of shallow acceptors in cubic semiconductors

Schmitt

Bangert

Landwehr

1991

J. Phys.: Condens. Matter

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Acceptor excitation spectra in germanium in a uniform magnetic field

Broeckx

1991

Phys. Rev. B

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The irreducible-spherical-tensor form of the effective-mass Hamiltonians for acceptors in cubic semiconductors in a homogeneous magnetic field parallel to a (001) direction or to a ( 111) direction has been derived. The Hamiltonians take into account the full structure of the I g SI 7+ valence-band edge, and they contain a point-charge potential with spherically symmetric qdependent dielectric screening. The eigenstates have been calculated variationally for the case of acceptors in germanium. For both orientations, the computations have been performed as a function of the magnetic-field strength, in the range from 0 to 5 T. The binding energies of the first 36 odd-parity excited states and of the first 4 even-parity states (which form the ground-state multiplet) are obtained. The oscillator strengths of the electric-dipole transitions from the ground-state sublevels to the excited states are also calculated, and the results are used to simulate theoretical acceptor excitation spectra, which are in excellent agreement with the available experimental farinfrared-absorption and photothermal-ionization-spectroscopy spectra. For the ground state and for the final states of the G and D lines, theoretical g factors are obtained which are very close to the experimental ones. In particular, the values g& = -0.45 and gz =+0.22 are computed for the acceptor ground state. It is found also that for the ground state and for the excited I 8( Td ) final states of the G, D, and B spectral lines, the ratio r =g2/4g& is always very close to the special value --', , which corresponds to a linear Zeeman splitting of the I 8 states into a degenerate doublet for B~~( 111)and into an equally spaced quartet for B~~(001 ).

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