The relaxation time of the electrical conductivity and the non‐linearity coefficient β in n‐type InSb in the temperature range from 1.8 to 4.1°K are studied as a function of power supplied to the sample from a d.c. source. The results are interpreted by considering energy losses by acoustic piezoelectric and deformation‐potential scattering and by optical polar scattering. The constants of piezoelectric and deformation potentials are estimated.
We consider the effect of carrier resonance scattering In slightly doped compensated semiconductors on the carrier capture by neutral shallow impurities, resulting in the formation of H--like centres. The energy dependence of the capture coefficient e(<) exhibits a weak maximum at 6 , the carrier afWdty to the H--like centre. The photoconductivity and photo Hall effect are studied for Si:B samples with a boron concentration NA < 10" cm-= and a degree of compensation K < at liquid helium temperature in 'heating' electric fields. The obtained energy dependence of the hole capture coefficient for neutral boron atoms is in agreement with our calculations.
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