Central-cell corrections for Si and S in GaAs in a strong magnetic field

Heron, R. J.; Lewis, R. A.; Simmonds, P.E.; Starrett, R.P.; Skougarevsky, A.; Clark, R. G.; Stanley, C.R.

doi:10.1063/1.369351

Cited by 8 publications

(5 citation statements)

References 26 publications

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“…In other semiconductor materials, such as Si and Ge, the electron is more strongly bound to the impurity center due to its larger effective mass. In this case, the electron probability density is on average [3], c) [31].…”

Section: A2 the Central Cell Correctionmentioning

confidence: 99%

GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

Cardozo

2004

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Section: A2 the Central Cell Correctionmentioning

confidence: 99%

GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

Cardozo

2004

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“…The energy levels of shallow donor-bound electrons can be described by the Coulomb interaction between the electron and the positive charge at the donor site, modified by the effective mass of the electron (0.0665 m e ) and the dielectric constant of the material (12.56) 7,8 . This leads to electron energy levels analogous to those of the hydrogen atom, with a small correction for the actual donor species, called the central cell correction (0.110 meV for S donor) 9 . The orbital transitions are in the TeraHertz (THz) frequency regime (a few meV).…”

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confidence: 99%

“…This leads to electron energy levels analogous to those of the hydrogen atom, with a small correction for the actual donor species, called the central cell correction (0.110 meV for S donor) 9 . The orbital transitions are in the TeraHertz (THz) frequency regime (a few meV).…”

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confidence: 99%

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Verification of polarization selection rules and implementation of selective coherent manipulations of hydrogenic transitions inn-GaAs

et al. 2005

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Electrons bound to shallow donors in GaAs have orbital energy levels analogous to those of the hydrogen atom. The polarization selection rules for optical transitions between the states analogous to the 1s and 2p states of hydrogen in a magnetic field are verified using Terahertz (THz) radiation from the UCSB Free Electron Laser. A polarization-selective coherent manipulation of the quantum states is demonstrated and the relevance to quantum information processing schemes is discussed.In recent years there has been great interest in low dimensional semiconductors, motivated in large part by the potential to implement quantum information processing 1,2,3 in a solid-state system 4,5,6 . The development of methods for selectively addressing and coherently manipulating such quantum systems is essential to a successful implementation of any quantum information scheme. In this work we describe verification of the selection rules for orbital transitions of electrons bound to shallow donors in GaAs and implementation of selective coherent manipulations.The energy levels of shallow donor-bound electrons can be described by the Coulomb interaction between the electron and the positive charge at the donor site, modified by the effective mass of the electron (0.0665 m e ) and the dielectric constant of the material (12.56) 7,8 . This leads to electron energy levels analogous to those of the hydrogen atom, with a small correction for the actual donor species, called the central cell correction (0.110 meV for S donor) 9 . The orbital transitions are in the TeraHertz (THz) frequency regime (a few meV). In the presence of a magnetic field, additional free electron states arise, forming a continuum above each Landau level 8 . The hydrogenic states can be labelled with the usual notation: 1s, 2p + , 2p − , etc.The energy of the hydrogenic states can be tuned with an applied magnetic field to bring orbital transitions into resonance with fixed frequencies of radiation. Klaassen, et al. 8 and Stillman, et al. 10 , have used this technique to perform spectroscopy experiments. To aid in identifying excited states, they have assumed that transitions are governed by the usual hydrogen atom dipole selection rules. However, these experiments have not included control of the polarization state of the THz beam, and to our knowledge no work has yet verified that the hydrogen selection rules remain valid for hydrogenic donors in a semiconductor.The hydrogen selection rules require a σ + -polarized photon to conserve angular momentum and excite the 1s to 2p + transition; σ − -polarization is required for 1s to 2p − . Since the electron effective mass in GaAs is isotropic, the selection rules for the bare hydrogen atom might be expected to hold. However, symmetry in a semiconductor can easily be lost. In quantum dots, for example, elongation of the dot along specific crystal planes can break the dot symmetry and mix the polarization eigenstates of excitons 11 . In this work, we first verify the selection rules for the 1s to 2p ± transitions ...

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“…the magnetic field dependence of the CCC for our calculations is accounted for via the field dependence of the envelope function,φ(r), in the 8-band model [214]. In addition, it should be noted that for Si Ga : GaAs, the CCC was experimentally and computationally shown to have a very small magnetic field dependence for the range of values considered here [218,219].…”

Section: Magnetic Field Dependent Central-cell-correctionsmentioning

confidence: 99%

Spin dynamics and opto-electronic properties of some novel semiconductor systems

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A set of problems pertaining to quantum information processing in semiconductors is investigated. Two schemes for implementing electronic qubits in strong and weak three dimensional quantum confinement regimes are studied along with their related electronic properties. Recent experiments motivated us to calculate electronic properties and g factors for nanowhisker quantum dots. These calculations were done using 8 band strain dependent k.p theory on a 3D grid and are in excellent agreement with experiment. It has been observed that the growth conditions cause the nanowhiskers to crystallize in wurtzite(WZ) form instead of their stable-phase zinc-blende bulk structure. Very little is known about the WZ phase of non-nitride III-V semiconductors as they do not naturally occur. We have therefore also predicted the electronic bandstructure and optical properties of nine III-V semiconductors in the WZ phase using transferable empirical pseudopotentials. Apart from quantum dots, the spin of an electron bound to an atomic impurity is an attractive candidate for quantum information processing as they do not suffer from structural uncertainties. This makes spin of an electron bound to a hydrogenic impurity an attractive candidate for a qubit as it possess the biggest radii of any ionic bound states in the solid and is a natural two state system. We have calculated the electric and magnetic field dependent modulation of the g tensor for a single Silicon donor embedded in a GaAs substrate. The spin dynamics of the weakly bound electron exhibits an unusual nonlinear behavior, which is not seen in structures with strong quantum confinement such as quantum dots.

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Central-cell corrections for Si and S in GaAs in a strong magnetic field

Cited by 8 publications

References 26 publications

GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

Verification of polarization selection rules and implementation of selective coherent manipulations of hydrogenic transitions inn-GaAs

Spin dynamics and opto-electronic properties of some novel semiconductor systems

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