Facet formation and characterization of III–V structures grown on patterned surfaces

Heinecke, H.; Wachter, M.; Schöffel, U.

doi:10.1016/s0026-2692(96)00119-x

Cited by 7 publications

(3 citation statements)

References 19 publications

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“…With SAG, different facets are thus found in the two directions on substrates with and without off-cut. 25 As mentioned previously, in our experiments, the trenches are aligned in the ͓110͔ and ͓110͔ directions on Si͑001͒ substrates with off-cut toward ͑111͒. The atomic steps are mainly aligned in the ͓110͔ direction.…”

Section: H1024supporting

confidence: 55%

“…These results are consistent with Heinecke's study on InP and InGaP SAG on off-cut substrates where ͕111͖ facets were found in one direction and ͕110͖ facets in another direction. 25 The difference in our experiment is that our trenches are much smaller and the SiO 2 sidewalls are not vertically straight, which prevents the formation of ͕110͖ facets. Because the active area percentages for Fig.…”

Section: H1024mentioning

confidence: 77%

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Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates

Wang

Leys

Nguyen

et al. 2010

J. Electrochem. Soc.

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In this paper, we report a comprehensive investigation of InP selective growth in shallow trench isolation ͑STI͒ structures on Si͑001͒ substrates 6°off-cut toward ͑111͒. Extended defect-free InP layers were obtained in the top region of 100 nm wide trenches. A thin Ge epitaxial layer was used as an intermediate buffer layer between the Si substrate and the InP layer. A Ge buffer was used to reduce the thermal budget for surface clean and to promote double-step formation on the surfaces. Baking the Ge surface in an As ambient improved the InP surface morphology and crystalline quality. InP showed highly selective growth in trenches without nucleation on SiO 2 . However, strong loading effects were observed at all growth pressures, which induced variation in local growth rates. We found trench orientation dependence of facet and stacking fault formation. More stacking faults and nanotwins originated from the STI sidewalls in ͓110͔ trenches. High quality InP layers were obtained in the top of the trenches along ͓110͔. The stacking faults generated by the dissociation of threading dislocations are trapped at the bottom of the trenches with an aspect ratio greater than 2.

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