Articles you may be interested inHigh-quality strain-relaxed SiGe films grown with low temperature Si buffer Optimization of luminescent properties with respect to crystal growth temperatures for SiGe single quantum wells grown by molecular beam epitaxy

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We present investigations of band-gap variations on selective grown GaxIn1−xAsyP1−y multiple quantum wells (MQW, Q1.05) using near-field optical microscopy. The MQW is excited with the near-field probe and the luminescence is collected through the same tip. By this mode, we are able to detect variation of the band gap with a lateral resolution of about 550 nm at a luminescence wavelength of 1115 nm. We show a spatial band-gap modulation near the (0–11) facet of the selective grown structures, which we suggest, is a result of a variation of the material composition. Furthermore, together with the simultaneously recorded topography, we are able to allocate a recombination path at a center wavelength of λ=1115 nm to the intersection of the (01–1) and (11–1) vertical side facets, which are formed by interfacet diffusion during surface selective growth of the GaxIn1−xAsyP1−y MQW.