Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications

Whitaker, Logan; Markman, Brian; Rodwell, M.J.W.

doi:10.1109/drc58590.2023.10186996

2023 Device Research Conference (DRC) 2023

DOI: 10.1109/drc58590.2023.10186996

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Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications

Logan Whitaker

Brian Markman

M.J.W. Rodwell

Abstract: 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template," Applied Physics

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Indium-Phosphide Transistors: A Review of Current State and Suitability for Commercial > 100-GHz Wireless Communication Systems

Markman,

Schröter

2024

IEEE Microwave

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Indium-Phosphide Transistors: A Review of Current State and Suitability for Commercial > 100-GHz Wireless Communication Systems

Markman,

Schröter

2024

IEEE Microwave

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Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications

Abstract: 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template," Applied Physics

Cited by 1 publication

References 19 publications

Indium-Phosphide Transistors: A Review of Current State and Suitability for Commercial > 100-GHz Wireless Communication Systems

Indium-Phosphide Transistors: A Review of Current State and Suitability for Commercial > 100-GHz Wireless Communication Systems

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