Electrical Properties of nMOSFETs Using the NiSi:Yb FUSI Electrode

Yu, Hao; Lauwers, A.; Demeurisse, C.; Richard, Olivier; Mertens, S.; Opsomer, Karl; Singanamalla, R.; Rosseel, Erik; Absil, P.; Biesemans, S.

doi:10.1109/led.2006.889259

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…Due to these lower densities one observes a lower 1/f noise compared to poly-Si as seen in figure 5. This behavior is also found to be quite consistent with a study conducted by Yu et al [19], where they observed the influence of two types of FUSI gate electrodes (NiSi and NiSiGe) on the oxygen transport in HfSiON based high-κ devices.…”

Section: Resultssupporting

confidence: 92%

Impact on 1/f Noise due to Gate Electrodes in High-k. Based MOSFETs - A Comparison Study Between Poly-Si Vs Metal Vs FUSI

Srinivasan¹

2008

ECS Trans.

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This work summarizes the effects of using three different gate electrodes -poly-Si, fully silicided (FUSI) and metal (TiN-TaN) on drain current low-frequency (1/f) noise in devices with HfO 2 as gate dielectric oxide. While 1/f β type spectra were observed, the frequency exponent β was found to vary. Number fluctuations were found to be the dominant mechanism for 1/f noise. 1/f noise in poly-Si based oxides show the highest noise while FUSI based devices show the lowest noise. A specific behavior was observed in SiO 2 and HfO 2 regions of oxide, when the trap profiles are assessed using f x S Vg spectra. Constant, decreasing and increasing trap distribution profiles were observed in the HfO 2 region for poly-Si, FUSI and metal gate electrodes respectively. Investigations reveal that the oxygen transport during the gate electrode processing were mainly responsible for the observed differences in 1/f noise.

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Section: Resultssupporting

confidence: 92%

Impact on 1/f Noise due to Gate Electrodes in High-k. Based MOSFETs - A Comparison Study Between Poly-Si Vs Metal Vs FUSI

Srinivasan¹

2008

ECS Trans.

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“…3,4) Although poor thermal stability is a primary obstacle in applying Ni silicide to nanoscale CMOSFETs, it has been reported that its thermal stability can be improved. [5][6][7][8][9][10][11] Several studies have addressed decreasing the Schottky barrier height (SBH) between the Ni silicide and source/drain to improve device performance by incorporating Pt or Pd [12][13][14] and rare earth (RE) metals such as ytterbium (Yb), erbium (Er), dysprosium (Dy), and terbium (Tb) [15][16][17][18][19][20][21] into the Ni silicide, which would reduce contact resistance. Similarly, their alloys could be used to lower hole and electron SBH, respectively.…”

Section: Introductionmentioning

confidence: 99%

Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

Zhang

Jung

Oh³

et al. 2010

Jpn. J. Appl. Phys.

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We study the elastic scattering of positronium atoms by hydrogen atoms at medium energies using partial-wave Born-Oppenheimer (BO) exchange amplitudes and report accurate BO cross sections in the energy range 0 to 60 eV. The present BO results agree with a 22-state R-matrix and a five-state coupled-channel model potential calculation, but disagree strongly with a conventional close-coupling calculation as well as its input BO amplitudes at medium energies.

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Electrical Properties of nMOSFETs Using the NiSi:Yb FUSI Electrode

Cited by 2 publications

References 7 publications

Impact on 1/f Noise due to Gate Electrodes in High-k. Based MOSFETs - A Comparison Study Between Poly-Si Vs Metal Vs FUSI

Impact on 1/f Noise due to Gate Electrodes in High-k. Based MOSFETs - A Comparison Study Between Poly-Si Vs Metal Vs FUSI

Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

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