Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

Zhang, Ying Ying; Jung, Soon-Yen; Oh, Jungwoo; Shin, Heungsoo; Oh, Se Kyung; Wang, Jin Suk; Majhi, P.; Jammy, R.; Lee, Hi Deok

doi:10.1143/jjap.49.055701

Cited by 9 publications

(10 citation statements)

References 22 publications

(27 reference statements)

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“…PtSi is a promissing contact material for PMOS source and drain, because of its excellent thermal stability, low Si consumption and low SBH for hole. However, the barrier height for electron (Φ Bn ) is 0.87 eV, which is relatively high compared to that of NiSi [3,5]. PtSi alloying with low work function metal is a promissing process to reduce Φ Bn , and we have reported that a 0.3 eV reduction of Φ Bn , was achieved by PtSi alloying with Hf [8].…”

Section: Introductionmentioning

confidence: 94%

“…Some researchers reported that Yb incorporation to NiSi reduced the Φ Bn of NiSi effectively [10,11]. In this paper, reducing the Φ Bn of PtSi by alloying with Yb was investigated [8], and the silicidation mechanism was proposed for the first time.…”

Section: Introductionmentioning

confidence: 96%

“…In order to reduce the contact resistivity, low Schottky barrier height (SBH) contact material for each n-and p-type Si, such as 0.3 eV or lower is required [2]. Therefore, the SBH modulation of the contact material has been widely studied [3,4,5]. Mono-silicide, such as NiSi is expected to be a candidate for the contact material with shallow junction, however, its poor thermal stability and difficulty to form thin NiSi layer is reported [6,7].…”

Section: Introductionmentioning

confidence: 99%

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Work function modulation of PtSi by alloying with Yb

Ishikawa

Gao

Ohmi

2011

IEICE Electron. Express

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Work function modulation of PtSi by alloying with Yb to achieve ultra-low contact resistance for advanced CMOS was investigated. Pt x Yb y Si was formed by depositing Pt(6-18 nm)/Yb(2-14 nm)/ n-Si(100) stacked structure followed by 400-800 • C/1-30 min silicidation in N 2 ambient. It was found that barrier height for electron (Φ Bn ) was decreased as the silicidation temperature and time increased, and Φ Bn was reduced to 0.52 eV by depositing Pt(6 nm)/Yb(14 nm) followed by 800 • C/30 min silicidation. It was found that Yb diffusion toword the silicide/Si interface was enhanced, compared to the sample formed by 500-600 • C silicidation, which leads to further decrease of Φ Bn . The estimated effective work function of PtSi decreased from 4.92 eV to 4.57 eV. Keywords: PtSi, YbSi, barrier height, work function, sputtering Classification: Electronic materials, semiconductor materials

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Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

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Work function modulation of PtSi by alloying with Yb

Ishikawa

Gao

Ohmi

2011

IEICE Electron. Express

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“…The addition of rare earth material such as Ytterbium 16,17 or Dysprosium 17,18 (Dy) to Ni followed by silicidation has also been demonstrated to give U B n,eff below 0.65 eV. In Ref.…”

Section: Introductionmentioning

confidence: 99%

NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height

Lim

Zhi

Zhou

et al. 2013

Journal of Applied Physics

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“…A second approach is to reduce the effective SBH for electrons by implanting with Se, S, Te or Al and thermally driving the implanted species to the silicide/silicon interface [4][5][6]. A third technique is to reduce the work function by using rare-earth metal silicides or by incorporating additional elements into the silicide [7]. Similar concepts apply for PMOS ρ c reduction.…”

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confidence: 99%

NMOS contact resistivity reduction with implants into silicides

Rao

Khaja

et al. 2013

Phys. Status Solidi C

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NMOS contact resistivity (ρc) for NiPtSi was reduced by up to 50% by implanting either Se or P into the silicide film, followed by thermally recrystallizing the silicide and activating the implanted species. The silicide module integration included use of plasma pre‐clean, a thin NiPt film, a low temperature soak anneal (RTP1), and millisecond laser anneals for post‐implant anneals (RTP2 and RTP3). Additionally, experiments with Se implants into TiSi2 achieved 60% reduction in ρc with exclusive use of laser anneals (for both RTP1 and RTP2). The test structures included van der Pauw, transmission line model (TLM) and diodes, all of which are testable after silicidation to extract of silicide phase and sheet resistance (Rs), silicide/SD external resistance (Rext), ρc, and junction breakdown (Vbj). In order to mimic realistic CMOS process flows, contact chain structures testable after metal‐1 were also used to obtain average resistance/contact and extract contact resistivity. The results in this work demonstrated adequate process window, while maintaining junction characteristics without degradation of Rs. Laser anneal steps were key enabler to achieve these results, and were designed to prevent dopant deactivation while minimizing diffusion of SD regions for USJ compatibility for sub‐20 nm CMOS nodes. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

Cited by 9 publications

References 22 publications

Work function modulation of PtSi by alloying with Yb

Work function modulation of PtSi by alloying with Yb

NiSi2 formation through annealing of nickel and dysprosium stack on Si(100) and impact on effective Schottky barrier height

NMOS contact resistivity reduction with implants into silicides

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