We study the elastic scattering of positronium atoms by hydrogen atoms at medium energies using partial-wave Born-Oppenheimer (BO) exchange amplitudes and report accurate BO cross sections in the energy range 0 to 60 eV. The present BO results agree with a 22-state R-matrix and a five-state coupled-channel model potential calculation, but disagree strongly with a conventional close-coupling calculation as well as its input BO amplitudes at medium energies.
Atom-probe tomography was utilized to map the three-dimensional distribution of Pd atoms in nickel monosilicide thin films on Si(100). A solid-solution Ni0.95Pd0.05 film on a Si(100) substrate was subjected to rapid thermal processing plus steady-state annealing to simulate the thermal processing experienced by NiSi source and drain contacts in standard complementary metal-oxide-semiconductor processes. Pd is found to segregate at the (Ni0.95Pd0.05)Si∕Si(100) heterophase interface, which may provide a previously unrecognized contribution to monosilicide stabilization. The silicide-Si heterophase interface was reconstructed in three dimensions on an atomic scale and its chemical roughness was evaluated.
Articles you may be interested inLow temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implantless germanium p-channel metal-oxide-semiconductor field-effect transistors Effective mobility characteristics of platinum-silicided p -type Schottky barrier metal-oxide-semiconductor fieldeffect transistor J. Vac. Sci. Technol. B 28, 799 (2010); 10.1116/1.3457936Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor fieldeffect-transistor application J. Appl. Phys. 105, 023702 (2009); 10.1063/1.3065990 20 -nm -gate-length erbium-/platinum-silicided n -∕ p -type Schottky barrier metal-oxide-semiconductor fieldeffect transistorsIn this article, incorporating ytterbium into Ni-silicide using an Yb interlayer is proposed to reduce the work function of Ni-silicide for a Ni-silicided Schottky barrier diode. The proposed Ni-silicide exhibited good Schottky barrier diode characteristics owing to the reduced work function of about 0.15− 0.38 eV. Even though the ytterbium layer was deposited below nickel, a ternary phase ͑Yb x Ni 1−x ͒Si is formed at the top region of the Ni-silicide, which is believed to reduce the work function.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.