Abstract:This work summarizes the effects of using three different gate electrodes -poly-Si, fully silicided (FUSI) and metal (TiN-TaN) on drain current low-frequency (1/f) noise in devices with HfO 2 as gate dielectric oxide. While 1/f β type spectra were observed, the frequency exponent β was found to vary. Number fluctuations were found to be the dominant mechanism for 1/f noise. 1/f noise in poly-Si based oxides show the highest noise while FUSI based devices show the lowest noise. A specific behavior was observed … Show more
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