We have studied doping profiles, activation levels, and defect annealing of P introduced in Ge by ion implantation at different doses and energy, and annealed under various conditions by rapid thermal annealing. Common to all implant energies, ion-implanted P in Ge exhibits a “box profile” at high implant doses, when a sufficiently high thermal budget is applied—similarly to the concentration-dependent diffusion of P introduced in Ge from a high-concentration solid source. Upon proper annealing conditions, the active P concentration is limited to (5–6)×1019at.∕cm3, implying a 50% activation level of the total retained atoms for high-dose implants and 100% for the low-dose implants. A low thermal budget is sufficient to fully regrow the amorphous layer formed by high-dose P implantations, without evidence of residual defects in the regrown germanium layer and at the end of range of the P implant.

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Metastable perovskite SrxTiyOz (STO) films were formed over a wide composition range by crystallization of layers grown by atomic layer deposition. An expansion of the lattice, decrease in permittivity and mild increase in band gap are observed with increasing Sr content. Sr-rich films [Sr/(Sr+Ti)∼62 at. %] show significant improvement in leakage current at low equivalent oxide thicknesses (EOT) as compared to stoichiometric films (Sr/(Sr+Ti) ∼50 at. %). TiN/STO/TiN capacitors with leakage ∼10−6 A/cm2 at 1 V were obtained at 0.6 nm EOT for crystalline Sr-rich STO. The difference in leakage behavior was found to correlate with different microstructures developed during crystallization.

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