P implantation doping of Ge: Diffusion, activation, and recrystallization

Satta, Alessandra; Janssens, Tom; Clarysse, Trudo; Simoen, Eddy; Meuris, Marc; Benedetti, Alessandro; Hoflijk, I.; Jaeger, B. De; Demeurisse, C.; Vandervorst, Wilfried

doi:10.1116/1.2162565

Cited by 96 publications

(49 citation statements)

References 12 publications

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“…In addition, no implant related defects were found for any annealing condition of PA-Ge. However, extended defects during the SPEG process is not expected for low Ge þ implant fluences and is not expected to form for anneals in excess of 400 C. 15,16,18,43 The observed activation behavior in both c-Ge and PAGe is certainly unique and a far departure from what has been observed previously for B þ implants in Si. The ultrashallow nature of the implants in this work suggests that there may be a correlation with surface proximity.…”

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confidence: 44%

Activation and thermal stability of ultra-shallow B+-implants in Ge

Yates

Darby

Petersen

et al. 2012

Journal of Applied Physics

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The activation and thermal stability of ultra-shallow B+ implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B+ implants at 2, 4, and 6 keV to fluences ranging from 5.0 × 1013 to 5.0 × 1015 cm−2 was studied using micro Hall effect measurements after annealing at 400–600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 °C for 60 s was characterized by channeling analysis with a 650 keV H+ beam by utilizing the 11B(p, α)2α nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 °C.

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confidence: 44%

Activation and thermal stability of ultra-shallow B+-implants in Ge

Yates

Darby

Petersen

et al. 2012

Journal of Applied Physics

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“…13,14 The limited data on the electrical activation for the temperature range considered are, however, a source of error for the calculated diffusivity. We have verified with simulation that this error remains small provided the activation level remains close to the one reported in the literature.…”

Section: B Diffusion Activation and Simulationmentioning

confidence: 99%

“…We have verified with simulation that this error remains small provided the activation level remains close to the one reported in the literature. 13,14 The general expression of the diffusion coefficient in extrinsic conditions can be described by the following equation: …”

Section: B Diffusion Activation and Simulationmentioning

confidence: 99%

Modeling and experiments on diffusion and activation of phosphorus in germanium

Tsouroutas

Tsoukalas

Zergioti

et al. 2009

Journal of Applied Physics

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We report on phosphorus diffusion and activation related phenomena in germanium. We have used both conventional thermal processing and laser annealing by pulsed nanosecond Nd:YAG laser. Chemical profiles were obtained by secondary-ion-mass spectroscopy, sheet resistance was estimated by the van der Pauw method, and structural defects were monitored by transmission electron microscopy. Our study covers the temperature range from 440 to 750 °C, and we were able to efficiently simulate the dopant profiles within that temperature range, taking into account a quadratic dependence of the P diffusion coefficient on the free electron concentration. To achieve that we have taken into account dopant activation dependence on temperature as well as dopant pile-up near the surface and dopant loss owing to outdiffusion during the annealing. A combined laser thermal treatment above the melting threshold prior to conventional annealing allowed the elimination of the implantation damage, so we could perceive the influence of defects on both transient dopant diffusion and outdiffusion.

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“…1 also to literature data at similar experimental conditions. [3][4][5] The overall picture is that both profiles are strongly interrelated with nitrogen diffusion giving the trend. In particular, at 550-600…”

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confidence: 99%

“…2 Consequently significant research efforts have been focused to the study of P macroscopic diffusion behavior as a function of the implantation and annealing conditions, as well as the nature of a capping layer (CL) on the Ge surface. [3][4][5][6][7] In parallel, techniques which could suppress P diffusion and/or enhance its activation level have been pursuit, most representative of which are co-implants with carbon or fluorine, 8,9 co-doping with other n-type dopants (such as arsenic and antimony) 10,11 and low temperature metal-induced dopant activation. 12 Nitrogen constitutes a significant element, which has been used in silicon front-end processes.…”

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confidence: 99%