The Langmuir−Blodgett deposition of organically passivated gold nanoparticles is reported. A monolayer of these particles has been incorporated into a metal−insulator−semiconductor (MIS) structure. The MIS device exhibits a hysteresis in its capacitance versus voltage characteristic, the magnitude of which is dependent on the voltage sweep conditions. Charge storage in the layer of nanoparticles is thought to be responsible for this effect.

This paper demonstrates a fabrication technology of Ag wrinkled electrodes with application in highly stretchable wireless sensors. Ag wrinkled thin films that were formed by vacuum deposition on top of pre-strained and relaxed polydimethylsiloxane (PDMS) substrates which have been treated using an O2 plasma and a surface chemical functionalization process can reach a strain limit up to 200%, while surface adhesion area can reach 95%. The electrical characteristics of components such as resistors, inductors and capacitors made from such Ag conductors have remained stable under stretching exhibiting low temperature and humidity coefficients. This technology was then demonstrated for wireless wearable electronics using compatible processing with established micro/nano fabrication technology.

Thin SiO2 oxides implanted by very-low-energy (1 keV) Si ions and subsequently annealed are explored with regards to their potential as active elements of memory devices. Charge storage effects as a function of Si fluence are investigated through capacitance and channel current measurements. Capacitance–voltage and source–drain current versus gate voltage characteristics of devices implanted with a dose of 1×1016 cm−2 or lower exhibit clear hysteresis characteristics at low electric field. The observed fluence dependence of the device electrical properties is interpreted in terms of the implanted oxide structure.

We report a controllable strain gauge factor obtained using a two-dimensional nanoparticle layer formed from platinum nanoparticles. A vacuum technique is used for room temperature nanoparticle deposition that allows control of the electrical resistance of the film, exhibiting semiconducting-like behavior when nanoparticle arrays cover the surface below a threshold value while above it a metallic behavior is prevalent. The highest sensitivity is obtained for intermediate density values of the nanoparticle assemblies, which could be explained using a tunneling and hopping current expression. The device, which exhibits more than one order of magnitude higher strain sensitivity than continuous metallic films, is fabricated at room temperature through standard lithographic processing allowing for miniaturization and easy integration in silicon technology or flexible substrates.