Langmuir−Blodgett Film Deposition of Metallic Nanoparticles and Their Application to Electronic Memory Structures

Paul, Shashi; Pearson, Christopher; Molloy, A.; Cousins, M.A.; Green, M.; Kolliopoulou, S.; Dimitrakis, P.; Normand, P.; Tsoukalas, D.; Petty, Michael C.

doi:10.1021/nl034008t

Cited by 279 publications

(200 citation statements)

References 14 publications

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“…The organically capped nanoparticles used in this work ͑Q-Au͒ were prepared using Schlenk line techniques. 13,14 The devices investigated in this work were all prepared in a class 1000 microelectronics clean room. Substrates were glass microscope slides.…”

Section: Methodsmentioning

confidence: 99%

Electrical behavior of memory devices based on fluorene-containing organic thin films

Dimitrakis

Normand

Tsoukalas

et al. 2008

Journal of Applied Physics

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. We report on switching and negative differential resistance ͑NDR͒ behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-͕4-͓5-͑4-tert-butylphenyl͒-1,3,4-oxadiazol-2-yl͔phenyl͖-9,9-dihexyl-N , N-diphenyl-fluoren-2-amine. The addition of gold nanoparticles ͑0.5 wt % ͒ did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a "forming" process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole-Frenkel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses.

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Section: Methodsmentioning

confidence: 99%

Electrical behavior of memory devices based on fluorene-containing organic thin films

Dimitrakis

Normand

Tsoukalas

et al. 2008

Journal of Applied Physics

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“…5,18 In the first type of device, switching mechanisms are explicitly explained by the theory that electron charge transfer from conjugate molecules or polymers (donor) to NPs (acceptor) results in the "ON" state and the reverse transfer of electrons from acceptor to donor by a built-in negative electric field in turn leads to the "OFF" state. This type of device shows a…”

Section: Introductionmentioning

confidence: 99%

Bistable Organic Memory Device with Gold Nanoparticles Embedded in a Conducting Poly(N-vinylcarbazole) Colloids Hybrid

et al. 2010

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ABSTRACT:We report on the nonvolatile memory characteristics of a bistable organic memory (BOM) device with Au nanoparticles (NPs) embedded in a conducting poly-(N-vinylcarbazole) (PVK) colloids hybrid layer deposited on flexible poly(ethyleneterephthalate) (PET) substrates. Transmission electron microscopy (TEM) images show the Au nanoparticles distributed isotropically around the surface of a PVK colloid. The average induced charge on Au nanoparticles, estimated using the C-V hysteresis curve, was large, as much as 5 holes/NP at a sweeping voltage of (3 V. The maximum ON/OFF ratio of the current bistability in the BOM devices was as large as 1 Â 10 5 . The cycling endurance tests of the ON/OFF switching exhibited a high endurance of above 1.5 Â 10 5 cycles, and a high ON/OFF ratio of ∼10 5 could be achieved consistently even after quite a long retention time of more than 1 Â 10 6 s. To clarify the memory mechanism of the hole-mediated bistable organic memory device, the interactions between Au nanoparticles and poly(Nvinylcarbazole) colloids was studied by estimating the density of states and projected density of state calculations using density functional theory. Au atom interactions with a PVK unit decreased the band gap by 2.96 eV with the new induced gap states at 5.11 eV (HOMO, E 0 ) and LUMO 4.30 eV and relaxed the HOMO level by 0.5 eV (E 1 ). E 1 at ∼6.2 eV is very close to the pristine HOMO, and thus the trapped hole in E 1 could move to the HOMO of pristine PVK. From the experimental data and theoretical calculation, it was revealed that a low-conductivity state resulted from a hole trapping at E o and E 1 states and subsequent hole transportation through Fowler-Nordheim tunneling from E 1 state to Au NPs and/or interface trap states leads to a high conductivity state.

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“…In the previous paper it has shown that the resistive switching will occur through the polymer capped nanostructure silver oxide embedded in a planer diode with two gold electrodes [1]. There are lots of reports showing different mechanisms for resistive switching observation [2][3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

New Electronic Memory Device Concepts Based on Metal Oxide-Polymer Nanostructures Planer Diodes

Rocha

Chen

Gomes

2012

Technological Innovation for Value Creation

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Abstract. Planar diodes fabricated with nano-structured silver oxide thin film show resistive switching effects. These structures can be programmed by voltage into two distinct resistive states and they are promising candidates for resistive random access memory (RRAM) devices. Cycle endurance on/off ration and charge retention are high. This wok provides insight into the mechanisms leading to the memory effects and to charge transport in these memory structures. Temperature dependent measurements show that charge carrier transport has activation energy of 70 meV suggesting that tunneling is the operating mechanism in both resistive states. The change in resistance is caused by a large increase in charge carrier density. This finding is explained by assuming that carrier transport takes place through a percolative network of micro-conducting paths.

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Langmuir−Blodgett Film Deposition of Metallic Nanoparticles and Their Application to Electronic Memory Structures

Cited by 279 publications

References 14 publications

Electrical behavior of memory devices based on fluorene-containing organic thin films

Electrical behavior of memory devices based on fluorene-containing organic thin films

Bistable Organic Memory Device with Gold Nanoparticles Embedded in a Conducting Poly(N-vinylcarbazole) Colloids Hybrid

New Electronic Memory Device Concepts Based on Metal Oxide-Polymer Nanostructures Planer Diodes

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