Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation

Thomidis, Christos; Barozzi, M.; Bersani, M.; Ioannou‐Sougleridis, V.; Vouroutzis, Ν.; Colombeau, B.; Skarlatos, D.

doi:10.1149/2.0061506ssl

Cited by 13 publications

(20 citation statements)

References 20 publications

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“…• C. 8 On the contrary, the released phosphorous diffuses to the Ge bulk. (iv) P bulk diffusion beyond the a/c interface depends strongly on the CL.…”

Section: Phosphorous and Nitrogen Diffusion Results-figures 9 And 10mentioning

confidence: 99%

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Phosphorous Diffusion in N₂⁺-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

Skarlatos

Ioannou‐Sougleridis

Barozzi

et al. 2017

ECS J. Solid State Sci. Technol.

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In this work we present a systematic study on post-implantation phosphorous diffusion control in Ge by co-implanted nitrogen in combination with various surface capping layers (Al2O3, SiO2 and Si3N4). Phosphorous has been implanted at low energy (11 keV) and high dose (1015 cm−2) in p-Ge (100) already implanted or not with low energy (10 keV−5 × 1014 cm−2) N2+. Flash Lamp Annealing (FLA) at 800–850°C for 20 ms in inert ambient has been used as post-implantation annealing scheme. In the absence of nitrogen, significant substrate damage and capping layer deterioration prevents a reliable comparison among the three capping materials. The presence of nitrogen in the Ge substrate, effectively suppresses the damage observed after the FLA. In this case, P diffusion is additionally retarded in the presence of Al2O3 as compared to SiO2 and Si3N4. The experimental results constitute a direct evidence of the action of the three capping layers as sinks for Ge vacancies with different interface recombination velocities. On the contrary, the nitrogen diffusion data suggest that interface recombination velocities of Ge interstitials are almost independent of the capping layer choice.

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“…• C. 8 On the contrary, the released phosphorous diffuses to the Ge bulk. (iv) P bulk diffusion beyond the a/c interface depends strongly on the CL.…”

Section: Phosphorous and Nitrogen Diffusion Results-figures 9 And 10mentioning

confidence: 99%

“…Implantation conditions were chosen the same as in Ref. 8 • C, and SiO 2 or Si 3 N 4 both deposited at 250…”

Section: Methodsmentioning

confidence: 99%

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Phosphorous Diffusion in N₂⁺-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

Skarlatos

Ioannou‐Sougleridis

Barozzi

et al. 2017

ECS J. Solid State Sci. Technol.

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“…45 The lower carrier concentration for arsenic observed in this work is unlikely due to diffusion suppression. Nitrogen has been reported to supress diffusion of As in Ge 51 and also suppression of B in Si 52 but has not been reported to suppress the diffusion of As in Si. The lower observed carrier concentration is more likely to be attributed to poor yields of the alkyne-azide fusion reaction.…”

Section: Dopant Profilingmentioning

confidence: 99%

Monolayer Doping of Si with Improved Oxidation Resistance

O’Connell

Collins

McGlacken³

et al. 2016

ACS Appl. Mater. Interfaces

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In this article, the functionalization of planar silicon with arsenic-and phosphorus-based azides was investigated. Covalently bonded and well-ordered alkyneterminated monolayers were prepared from a range of commercially available dialkyne precursors using a wellknown thermal hydrosilylation mechanism to form an acetylene-terminated monolayer. The terminal acetylene moieties were further functionalized through the application of copper-catalyzed azide−alkyne cycloaddition (CuAAC) reactions between dopant-containing azides and the terminal acetylene groups. The introduction of dopant molecules via this method does not require harsh conditions typically employed in traditional monolayer doping approaches, enabling greater surface coverage with improved resistance toward reoxidation. X-ray photoelectron spectroscopy studies showed successful dialkyne incorporation with minimal Si surface oxidation, and monitoring of the C 1s and N 1s core-level spectra showed successful azide−alkyne cycloaddition. Electrochemical capacitance−voltage measurements showed effective diffusion of the activated dopant atoms into the Si substrates.

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“…One possible approach that has not been fully explored is the co-implantation of fluorine and donors, with the explicit intention of leveraging the high electronegativity of fluorine to preferentially complex with vacancies present in the material, thus neutralizing their effect on the donors [19]. Density Functional Theory (DFT) calculations [20] indicate that the binding energy of a fluorine-vacancy (FV) complex is significantly higher than the DV complexes, whilst the formation of fluorinedonor complexes are considered highly unlikely (in contrast with the case of nitrogen [21] and carbon co-doping [22]). This approach is therefore expected to significantly improve the donor electrical activity through both reduced DV complex formation and retarded diffusivity (donor diffusion is vacancy-assisted).…”

Section: Introductionmentioning

confidence: 99%

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

Monmeyran

Crowe

Gwilliam

et al. 2017

Journal of Applied Physics

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Co-doping with fluorine is a potentially promising method for defect passivation to increase the donor electrical activation in highly doped n-type germanium. However, regular high dose donor-fluorine co-implants, followed by conventional thermal treatment of the germanium typically results in a dramatic loss of the fluorine, as a result of the extremely large diffusivity at elevated temperatures, partly mediated by the solid phase epitaxial regrowth (SPE). To circumvent this problem, we propose and experimentally demonstrate two non-amorphizing coimplantation methods; one involving consecutive, low dose fluorine implants, intertwined with rapid thermal annealing (RTA) and the second, involving heating of the target wafer during implantation. Our study confirms that the fluorine solubility in germanium is defect-mediated and we reveal the extent to which both of these strategies can be effective in retaining large fractions of both the implanted fluorine and, critically, phosphorus donors.2

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Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation

Cited by 13 publications

References 20 publications

Phosphorous Diffusion in N₂⁺-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

Phosphorous Diffusion in N₂⁺-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

Monolayer Doping of Si with Improved Oxidation Resistance

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

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Strong Diffusion Suppression of Low Energy-Implanted Phosphorous in Germanium by N2 Co-Implantation

Cited by 13 publications

References 20 publications

Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

Monolayer Doping of Si with Improved Oxidation Resistance

Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique

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Phosphorous Diffusion in N₂⁺-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

Phosphorous Diffusion in N₂⁺-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering