Electrical and optical characterization of (111) oriented GaP/Si diodes grown by CBE

Ohlsson, Björn; Carlsson, S.-B.; Gustafsson, Anders; Håkanson, Ulf; Litwin, A.; Samuelson, Lars

doi:10.1016/s0022-0248(99)00597-7

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…The present study of planar defects in GaP complements previous research on similar defects in other compound semiconductors by examining the properties of antisite bonds in a material with a larger polar anisotropy; GaP has larger differences in the atomic number and covalent radii of the constitutive atoms than found in compound semiconductors such as GaAs. Furthermore, atomic bonds in GaP have a greater ionic character than in GaAs (Phillips, 1973) and there are potential applications of these materials (Narayanan et al ., 1998, 2000; Ohlsson et al ., 2000). Because GaP and Si have a small lattice misfit (∼0.3%), suitable APBs can be produced by the epitactic growth of GaP on Si (001) substrates.…”

Section: Introductionmentioning

confidence: 99%

Structure of the (110) antiphase boundary in gallium phosphide

Cohen

Carter

2002

Journal of Microscopy

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SummaryThe morphology of antiphase boundaries in GaP films grown by molecular beam epitaxy on Si (001) has been studied by transmission electron microscopy. The inversion of the crystal polarity between antiphase domains was confirmed by convergent-beam electron diffraction. The APBs were often found to facet parallel to {110} planes. Strong-beam α -fringe contrast observed along the (110) facets indicates that adjacent antiphase domains are related by an additional rigid-body lattice translation. Diffraction-contrast analysis shows that this R corresponds to a shear parallel to the [001] direction and a small expansion. The magnitude of the translation was inferred, quantitatively, through a comparison between energy-filtered zero-loss images of the α -fringe contrast with numerical calculations. The components of the rigid-body lattice translation were determined to be 0.023 ± 0.0033 nm in the [001] direction and 0.005 ± 0.002 nm in the !! 0 direction. Based upon a geometric model of the {110} antiphase boundary, the lengths of the Ga and P antisite bonds were calculated to be 254 ± 2 pm and 227 ± 4 pm, respectively.

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Section: Introductionmentioning

confidence: 99%

Structure of the (110) antiphase boundary in gallium phosphide

Cohen

Carter

2002

Journal of Microscopy

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“…By using the calculated magnitude of differential spectra and the penetration depth of light into the Si substrate, the effectiveness of such excitation is estimated to be small, about 10 À3 times smaller than that of the Si substrate. However, if one uses wide band gap semiconductors such as GaN as substrates, 15,16) whose valence bands are located far below the HOMO state of amino acids as shown in Fig. 6(b), the new transitions shown by the other arrow in Fig.…”

Section: Optical Ionizationmentioning

confidence: 99%

Energy-Level Alignment, Ionization, and Stability of Bio-Amino Acids at Amino Acid/Si Junctions

Oda

Nakayama

2008

jjap

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The electronic structures of 20 bio-amino acids and amino acid/Si junctions are studied using ab initio calculations. It is shown that the amino acids can be classified into two groups depending on where the highest occupied molecular orbital (HOMO) state is localized. This classification is possible owing to the molecular structural geometry and the constituent atoms in the residue part of amino acids. Moreover, we found that, owing to the hybridization of electronic states between amino acids and Si substrate, the optical transition from the HOMO state of the amino acid to the conduction band states of Si becomes possible at the amino acid/Si interface. This result indicates the possibility of the optical ionization of amino acid by producing amino acid/semiconductor junctions. The present results provide basic data not only for the microscopic understanding of protein electronic structures but also for the electronic design of new protein functions.

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“…1 In order to grow such layers successfully the Si surface needs to be well defined. 1 In order to grow such layers successfully the Si surface needs to be well defined.…”

Section: Introductionmentioning

confidence: 99%