Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111)

International audienceThe thermal decomposition of Si dioxide layers formed by wet chemical treatment on Si(001) has been studied by low-energy electron microscopy. Independent nucleations of voids occur into the Si oxide layers that open by reaction at the void periphery. Depending on the voids, the reaction rates exhibit large differences via the occurrence of a nonlinear growth of the void radius. This non-steady state regime is attributed to the accumulation of defects and silicon hydroxyl species at the SiO2/Si interface that enhances the silicon oxide decomposition at the void periphery. (C) 2016 AIP Publishing LLC

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Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)

Leroy

Passanante

Cheynis

et al. 2016

Applied Physics Letters

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Nanoscalein situinvestigation of ultrathin silicon oxide thermal decomposition by high temperature scanning tunneling microscopy

Xue

Xu²,

2007

Nanotechnology

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A surface chemical reaction—the thermal decomposition of ultrathin silicon oxide (∼1 nm) by ultrahigh vacuum (UHV) thermal annealing at 600–800 °C—is in situ investigated on a nanometer scale by high temperature scanning tunneling microscopy (STM). The reaction is initiated by the creation of circular voids which expose the underlying silicon substrate. Growth kinetics of the voids is scrutinized via time-lapse STM movies. It is verified that the void perimeters grow linearly with time before coalescence and the reaction occurs peripherally around the void perimeters. It is also demonstrated that the decomposition rate varies concomitantly with the local environment near the reaction fronts. The observed low–high–low rate evolution is qualitatively explained. Increased reaction activation energy is found in the final decomposition stage and the origin of the increase is proposed to be due to the local morphological evolution.

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Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111)

Abstract: Nanoscale structural change in a sputter-deposited SiO 2 /a-Si/SiO 2 sandwich

Cited by 2 publications

References 16 publications

Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)

Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)

Nanoscalein situinvestigation of ultrathin silicon oxide thermal decomposition by high temperature scanning tunneling microscopy

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