Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers

Titova, Valeriya; Veith‐Wolf, Boris; Startsev, Dimitrij; Schmidt, Jan

doi:10.1016/j.egypro.2017.09.272

Cited by 28 publications

(17 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, additional Na has a considerable effect on V oc , and it is not always easy to reveal the effect of passivation layer alone. Nevertheless, there are still a lot of approaches that need optimization like using very thin passivation layers to allow tunneling or using different oxides, such as TiO x , HfO x , etc., as a passivation layer [31,32]. Furthermore, passivation layers combined with light management techniques, like using Ag NP metallic mirrors below the passivation layers, require some improvements.…”

Section: Discussionmentioning

confidence: 99%

Dielectric-Based Rear Surface Passivation Approaches for Cu(In,Ga)Se2 Solar Cells—A Review

et al. 2019

View full text Add to dashboard Cite

This review summarizes all studies which used dielectric-based materials as a passivation layer at the rear surface of copper indium gallium (di)selenide, Cu(In,Ga)Se2, (CIGS)-based thin film solar cells, up to 2019. The results regarding the kind of dielectric materials, the deposition techniques, contacting approaches, the existence of additional treatments, and current–voltage characteristics (J–V) of passivated devices are emphasized by a detailed table. The techniques used to implement the passivation layer, the contacting approach for the realization of the current flow between rear contact and absorber layer, additional light management techniques if applicable, the solar simulator results, and further characterization techniques, i.e., external quantum efficiency (EQE) and photoluminescence (PL), are shared and discussed. Three graphs show the difference between the reference and passivated devices in terms of open-circuit voltage (Voc), short-circuit current (Jsc), and efficiency (η), with respect to the thicknesses of the absorber layer. The effects of the passivation layer at the rear surface are discussed based on these three graphs. Furthermore, an additional section is dedicated to the theoretical aspects of the passivation mechanism.

show abstract

Section: Discussionmentioning

confidence: 99%

Dielectric-Based Rear Surface Passivation Approaches for Cu(In,Ga)Se2 Solar Cells—A Review

et al. 2019

View full text Add to dashboard Cite

show abstract

“…However, this choice has two main drawbacks: (i) the surface of nanoPS is rapidly oxidized upon exposition to the atmosphere, leading to changes in its optical properties [16], and (b) two main recombination mechanisms can take place on the surface of nanoPS, namely radiative recombination through surface states (surface recombination) and through oxygen vacancies [17]. In this line, thin layers of In2O3 [16], SiO2 or SiO2/SiN [18], TiO2 [19] and Al2O3 or Al2O3/SiN have been used to passivate the surface of nanoPS [20]. Thin layers with high resistivity or even insulating nature in contact with the active layer of solar cells limit the amount of current that can flow into a small localized area, thus lowering the carrier mobility which improves cell efficiency as a result of an increase in the open-circuit voltage [21].…”

Section: Introductionmentioning

confidence: 99%

Hybrid porous silicon/silver nanostructures for the development of enhanced photovoltaic devices

2020

View full text Add to dashboard Cite

“…High passivation performance and efficient carrier collection are prerequisites to achieving high PCE. The passivation performance of the TiO x has been improved by post‐deposition annealing, [ 12–17 ] inserting silicon oxide interlayer, [ 12–17 ] and hydrogen plasma treatment. [ 11,18–20 ] The origin of the improved passivation performance is plausibly caused by the formation of SiOTi bonds, [ 16,21,22 ] hydrogenation of dangling bonds on the Si surface, [ 11,18–20 ] and enhanced band bending by trapped electrons in TiO x .…”

Section: Introductionmentioning

confidence: 99%

Improved Performance of Titanium Oxide/Silicon Oxide Electron‐Selective Contacts by Implementation of Magnesium Interlayers

Nakagawa

Gotoh

Inoue

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

The impact of the implementation of magnesium interlayer and the layer thickness (tTiOx) of titanium oxide on the electrical properties of TiOx/SiOy/Si heterojunctions is investigated to improve electron transport for use in silicon heterojunction solar cells. The passivation performance is improved with increasing tTiOx. For the samples with Mg interlayer, ohmic contact can be attained for the thicker TiOx layer compared with the sample without Mg interlayer. Schottky contact is mitigated by the TiOx/SiOy stacking layers and Mg interlayer, attributed to the reduction of interfacial energy level by TiOx/SiOy stacking layers and enhanced downward band bending by Mg interlayer. The open‐circuit voltage and fill factor of the solar cells are improved by inserting the TiOx/SiOy stack and the Mg interlayer, indicating that the electron selectivity is enhanced. Excellent surface passivation and transport properties can be achieved by controlling TiOx layer thickness and using the Mg interlayer.

show abstract

Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers

Cited by 28 publications

References 16 publications

Dielectric-Based Rear Surface Passivation Approaches for Cu(In,Ga)Se2 Solar Cells—A Review

Dielectric-Based Rear Surface Passivation Approaches for Cu(In,Ga)Se2 Solar Cells—A Review

Hybrid porous silicon/silver nanostructures for the development of enhanced photovoltaic devices

Improved Performance of Titanium Oxide/Silicon Oxide Electron‐Selective Contacts by Implementation of Magnesium Interlayers

Contact Info

Product

Resources

About