Hybrid porous silicon/silver nanostructures for the development of enhanced photovoltaic devices

Ramadan, Rehab; Manso‐Silván, Miguel; Martín-Palma, Raúl J.

doi:10.1007/s10853-020-04394-z

Cited by 43 publications

(28 citation statements)

References 53 publications

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“…A higher diffusion coefficient indicates a larger average length for a carrier between generation and recombination [33]. These results are further confirmed by the improvement of the optoelectronic performance of the Al/Si+nanoPS+AgNPs/TiO2/NiCr devices, as demonstrated in a previous work [24].…”

Section: Ac Electrical Measurementssupporting

confidence: 84%

“…The main aim of the present work is to study the AC and DC electrical conduction properties of three different Si-based MIS Schottky barrier diodes to assess their potential use in the field of photovoltaics. The optoelectronic properties of similar structures were recently studied [24]. The basic structure of the MIS Schottky barrier devices is Al/Si/TiO 2 /NiCr, with the Al/Si interface behaving as an ohmic contact.…”

Section: Introductionmentioning

confidence: 99%

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Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Ramadan

Martín-Palma

2020

Energies

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The accurate determination of the electrical properties of photovoltaic devices is of utmost importance to predict and optimize their overall optoelectronic performance. For example, the minority carrier lifetime and the carrier diffusion length have a strong relationship with the carrier recombination rate. Additionally, parasitic resistances have an important effect on the fill factor of a solar cell. Within this context, the alternating current (AC) and direct current (DC) electrical characteristics of Si-based metal–insulator–semiconductor (MIS) Schottky barrier diodes with the basic structure Al/Si/TiO2/NiCr were studied, aiming at using them as photovoltaic devices. The basic diode structure was modified by adding nanostructured porous silicon (nanoPS) layers and by infiltrating silver nanoparticles (AgNPs) into the nanoPS layers, leading to Al/Si+nanoPS/TiO2/NiCr and Al/Si+nanoPS+AgNPs/TiO2/NiCr structures, respectively. The AC electrical properties were studied using a combination of electrochemical impedance spectroscopy and Mott–Schottky analysis, while the DC electrical properties were determined from current–voltage measurements. From the experimental results, an AC equivalent circuit model was proposed for the three different MIS Schottky barrier diodes under study. Additionally, the most significant electrical parameters were calculated. The results show a remarkable improvement in the performance of the MIS Schottky barrier diodes upon the addition of hybrid nanoPS layers with embedded Ag nanoparticles, opening the way to their use as photovoltaic devices.

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Section: Ac Electrical Measurementssupporting

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Ramadan

Martín-Palma

2020

Energies

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“…Using the Imagej software package, the pore diameter of the fabricated PSi nanostructures was calculated to be in the range of 20-50 nm for the spherical nano-holes and was larger, in the range of 75-200 nm, for the linear cracks. Accordingly, the PL emission in the visible is attributed to quantum confinement in the nanocrystals, which results in an increased bandgap value compared to that of bulk Si (1.12 eV) [31]. An increase in porosity results in a reduction of the size of the Si nanocrystals, which results in a band position blueshift, and vice versa [15].…”

Section: Photoluminescence Properties Of Psi and Zno Layersmentioning

confidence: 99%

Fabrication of Zinc Oxide and Nanostructured Porous Silicon Composite Micropatterns on Silicon

2020

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The luminescent properties of zinc oxide (ZnO) and nanostructured porous silicon (PSi) make these materials very appealing for photoemission applications. The current study reports on the fabrication of a composite of ZnO and nanostructured porous silicon micropatterns (ZnO + PSi micropatterns) onto heavily-doped silicon surfaces. The proposed composite micropattern is devoted to the future development of light-emitting diodes. The fabrication of the ZnO + PSi micropatterns was carried out in a two–step process. (1) A regular hexagonal micropattern of a photoresist/ZnO stack was fabricated by UV lithography on crystalline silicon substrates. (2) Before being lifted off the photoresist, nanostructured PSi micropatterns were fabricated by electrochemically etching the exposed areas of the silicon substrate. Subsequently, wet etching of the photoresist was carried out for the final development of the composite ZnO and PSi micropatterns. Further, thin films of ZnO and nanostructured PSi layers were characterized. In particular, their photoluminescent properties were analyzed, as well as their morphology and composition. The experimental PL results show that the ZnO layers have emission broadbands centered at (2.63 eV, blue), while the PSi layers show a band centered at (1.71 eV, red). Further, the emission peaks from the PSi layers can be tuned by changing their fabrication conditions. It was observed that the properties of the ZnO thin films are not influenced by either the surface morphology of PSi or by its PL emissions. Therefore, the PL properties of the composite ZnO + PSi micropatterns are equivalent to those featuring the addition of PSi layers and ZnO thin films. Accordingly, broadband optical emissions are expected to arise from a combination between the ZnO layer (blue band) and PSi (red band). Furthermore, the electrical losses associated with the PSi areas can be greatly reduced since ZnO is in contact with the Si surface. As a result, the proposed composite micropatterns might be attractive for many solid-state lighting applications, such as light-emitting diodes.

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“…The researchers proposed to scale thick substrates by adding different materials such as: Aluminum, silver, nickel and epoxy [23][24][25][26]. They are generally composed of a mixture of inorganic particles embedded in a polymer matrix.…”

Section: Introductionmentioning

confidence: 99%

Opto-Electronic Properties of Epoxy/Silicone Blend Based Thin Films

Ziat

Belkhanchi

Hammi

et al. 2021

Preprint

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Recently, the rise of two dimensional amorphous nanostructured thin films have ignited a big interest because of their intriguingly isotropic structural and physical properties leading to potential applications in the nano-optoelectronics. However, according to literature, most of optoelectronic properties are investigated on chalcogenides related heterostructures. This has motivated the present work aiming to provide a new platform for the fabrication, examination of the properties and the applications of 2D nanostructured thin films based on epoxy/silicone blend. Thin films of Epoxy/Silicone loaded with nitrogen doped carbon nanotubes (N-CNTs) were prepared by sol-gel method and deposited on Indium Tin Oxide (ITO) glass substrates at room temperature. Further examination of optical properties aimed the investigation of optical pseudo-gap and Urbach energy and enabled the determination of processed films thickness based on Manifacier and Swanepol method. The results indicated that the unloaded thin films have a direct optical transition with a value of 3.61 eV followed by noticeable shift towards narrowing gaps depending on the loading rate. Urbach's energy is 0.19 eV for the unloaded thin films, and varies from 0.43 to 1.33 eV for the loaded thin films with increasing the rate of N-CNTs. It is inversely variable with the optical pseudo-gap. Finally, Epoxy/Silicone loaded with N-CNTs nanocomposites films can be developed as active layers with specific optical characteristics, giving the possibility to be used in electro-optical applications.

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Hybrid porous silicon/silver nanostructures for the development of enhanced photovoltaic devices

Cited by 43 publications

References 53 publications

Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Electrical Characterization of MIS Schottky Barrier Diodes Based on Nanostructured Porous Silicon and Silver Nanoparticles with Applications in Solar Cells

Fabrication of Zinc Oxide and Nanostructured Porous Silicon Composite Micropatterns on Silicon

Opto-Electronic Properties of Epoxy/Silicone Blend Based Thin Films

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