Spectral conversion of sunlight is a promising route to reduce spectral mismatch losses that are responsible for the major part of the efficiency losses in solar cells. Both upconversion and downconversion materials are presently explored. In an upconversion process, photons with an energy lower than the band gap of the solar cell are converted to higher energy photons. These higher photons are directed back to the solar cell and absorbed, thus increasing the efficiency. Different types of upconverter materials are investigated, based on luminescent ions or organic molecules. Proof of principle experiments with lanthanide ion based upconverters have indicated that the benefit of an upconversion layer is limited by the high light intensities needed to reach high upconversion quantum efficiencies. To address this limitation, upconverter materials may be combined with quantum dots or plasmonic particles to enhance the upconversion efficiency and improve the feasibility of applying upconverters in commercial solar cells.
The possibility to tune chemical and physical properties in nanosized materials has a strong impact on a variety of technologies, including photovoltaics. One of the prominent research areas of nanomaterials for photovoltaics involves spectral conversion. Modification of the spectrum requires down- and/or upconversion or downshifting of the spectrum, meaning that the energy of photons is modified to either lower (down) or higher (up) energy. Nanostructures such as quantum dots, luminescent dye molecules, and lanthanide-doped glasses are capable of absorbing photons at a certain wavelength and emitting photons at a different (shorter or longer) wavelength. We will discuss upconversion by lanthanide compounds in various host materials and will further demonstrate upconversion to work for thin-film silicon solar cells.
A near-infrared to visible upconversion phosphor (b-NaYF 4 :Yb 3 + (18%), Er 3 + (2%)) has been applied at the back of a thin film hydrogenated amorphous silicon (a-Si:H) solar cell in combination with a white back reflector to investigate its response to sub-bandgap infrared irradiation. Current-voltage measurements were performed on the solar cells. A maximum current enhancement of 6.2 mA was measured on illumination with a 980 nm diode laser at 28 mW. This corresponds to an external quantum efficiency (EQE) of 0.03% of the solar cell. A small part, 0.01%, was due to the direct absorption of sub-bandgap radiation but the larger part originates from upconversion. These experiments constitute a proof-of-principle for the utilization of photon upconversion in thin film solar cells. A close match between the non-linear behavior of the upconversion material and the EQE was found by varying the intensity of the laser light.
Non-doped as well as titanium and lutetium doped zirconia (ZrO 2) materials were synthesized via the sol-gel method and structurally characterized with X-ray powder diffraction. The addition of Ti in the zirconia lattice does not change the crystalline structure whilst the Lu doping introduces a small fraction of the tetragonal phase. The UV excitation results in a bright white-blue luminescence at ca. 500 nm for all the materials which emission could be assigned to the Ti 3+ e g t 2g transition. The persistent luminescence originates from the same Ti 3+ center. The thermoluminescence data shows a well-defined though rather similar defect structures for all the zirconia materials. The kinetics of persistent luminescence was probed with the isothermal decay curve analyses which indicated significant retrapping. The short duration of persistent luminescence was attributed to the quasi-continuum distribution of the traps and to the possibility of shallow traps even below the room temperature.
Ultrathin Cu(In,Ga)Se2 solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. An optical lithography process that can produce sub‐micrometer contacts in a SiO2 passivation layer at the CIGS rear contact is developed in this work. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques.
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