Effect of wafer stress on surface photovoltage diffusion length measurements

Hwang, In-Hwan; Schroder, D.K.

doi:10.1016/0038-1101(93)90195-v

Cited by 4 publications

(3 citation statements)

References 15 publications

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“…This non-standard behavior could be due to several causes: surface roughness, non-uniform reflectivity, or non-uniform absorption coefficient due to nonhomogeneous stress distribution in the material. Similar non standard SPV behaviors in cast mc Si was observed by Hwang and Schroder [7] and attributed to inaccurate values of a used to obtain the SPV -1 vs a -1 plots. These authors used the a(l) data of ref.…”

Section: Resultssupporting

confidence: 78%

Minority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar Cells

Cavalcoli

Cavallini

Rossi

et al. 2003

SSP

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In the present contribution the effect of the processing steps on the characteristics of ribbon-, cast-multicrystalline and Cz monocrystalline Si is investigated by SPV (Surface PhotoVoltage) analyses. The minority carrier diffusion length L D has been measured by SPV in noncontact and non-destructive mode at the different processing steps employed in solar cell processing. The diffusion length, related to the material recombination properties, increases after the emitter diffusion process and increases after the subsequent process steps. The comparison between the characteristics of the starting material and the properties of the final devices allowed us to understand the role of the gettering phenomena occurred during the processing steps and their efficiency in impurity removal. This analysis shows that the increase in the diffusion length after the processing steps strongly depends on the quality of the starting material and thus on the material defect content.

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Section: Resultssupporting

confidence: 78%

Minority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar Cells

Cavalcoli

Cavallini

Rossi

et al. 2003

SSP

View full text Add to dashboard Cite

show abstract

“…In many cases, such contacts have been found to alleviate the surface state relaxation phenomena mentioned above (see, e.g., [465,528]). They have also been used to circumvent problems associated with surface topographies which precluded the attainment of a stable capacitive surface [456,458].…”

Section: Practical Considerationsmentioning

confidence: 99%

“…Hwang and Schroder [456] have compared the Goodman plots obtained for Czochralski-grown mono-crystalline Si and cast poly-crystalline Si, shown in Fig. 65.…”

Section: Practical Considerationsmentioning

confidence: 99%