X-ray detectors play a pivotal role in development and advancement of humankind, from far-reaching impact in medicine to furthering the ability to observe distant objects in outer space. While other electronics show the ability to adapt to flexible and lightweight formats, state-of-the-art X-ray detectors rely on materials requiring bulky and fragile configurations, severely limiting their applications. Lead halide perovskites is one of the most rapidly advancing novel materials with success in the field of semiconductor devices. Here, an ultraflexible, lightweight, and highly conformable passively operated thin film perovskite X-ray detector with a sensitivity as high as 9.3 ± 0.5 µC Gy −1 cm −2 at 0 V and a remarkably low limit of detection of 0.58 ± 0.05 Gy s −1 is presented. Various electron and hole transporting layers accessing their individual impact on the detector performance are evaluated. Moreover, it is shown that this ultrathin form-factor allows for fabrication of devices detecting X-rays equivalently from front and back side.
It is demonstrated that boron-doped nanowires have predominantly long-term stable wurtzite phase while the majority of phosphorus-doped ones present diamond phase. A simplified model based on the different solubility of boron and phosphorus in gold is proposed to explain their diverse effectiveness in retaining the wurtzite phase. The wurtzite nanowires present a direct transition at the Γ point at approximately 1.5 eV while the diamond ones have a predominant emission around 1.1 eV. The aforementioned results are intriguing for innovative solar cell devices.
AlInN/AlN/GaN heterostructures were characterized by atomic force microscopy. V-defects and channels were observed. In phase-contrast mode, these features were found related to inhomogeneities associated with In-segregation (and/or In-diffusion) and Al-rich surface reconstruction. The electrical characterization via conductive atomic force microscopy showed enhanced conductivity regions related to In-rich traces within channels and V-defects.
High-efficiency
perovskite-based solar cells comprise sophisticated
stacks of materials which, however, often feature different thermal
expansion coefficients and are only weakly bonded at their interfaces.
This may raise concerns over delamination in such devices, jeopardizing
their long-term stability and commercial viability. Here, we investigate
the root causes of catastrophic top-contact delamination we observed
in state-of-the-art p-i-n perovskite/silicon tandem
solar cells. By combining macroscopic and microscopic analyses, we
identify the interface between the fullerene electron transport layer
and the tin oxide buffer layer at the origin of such delamination.
Specifically, we find that the perovskite morphology and its roughness
play a significant role in the microscopic adhesion of the top layers,
as well as the film processing conditions, particularly the deposition
temperature and the sputtering power. Our findings mandate the search
for new interfacial linking strategies to enable mechanically strong
perovskite-based solar cells, as required for commercialization.
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