We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H-SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 • C and +100 • C, respectively, are reported. Results of studying the radiation resistance of 4H-SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation.

The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods, which can be applied to semi-insulating materials, allow to characterize the deep traps located up to midgap and can determine whether they are hole or electron traps. We have identified 12 different traps, some common to all the investigated samples, some peculiar to one of them. A comparison of the results obtained from the various materials is given and the status of defect models is reviewed.

Surface photovoltage spectroscopy and spectral photoconductivity measurements have been carried out in the UV spectral region on GaN nanowires to analyze the near band-edge region. The results reveal the presence of tails in the band−band absorption spectra. Surface Photovoltage spectra performed on the as-grown nanowire ensamble show a long band tail of about 0.1 eV. Spectral photoconductivity on singly contacted nanowires shows that the band tail width strictly depends on the wire diameter. These results are explained by the Franz−Keldysh effect due to the internal electric field induced by Fermi level pinning at the nanowire surface. The experimental values of the absorption tail are well in agreement with the results obtained by simulating the electric field in a cylindrical model.

Direct, solid-state X-ray detectors based on organic single crystals are shown to operate at room temperature, in air, and at voltages as low as a few volts, delivering a stable and reproducible linear response to increasing X-ray dose rates, with notable radiation hardness and resistance to aging. All-organic and optically transparent devices are reported.