Silicon carbide and its use as a radiation detector material

Nava, F.; Bertuccio, G.; Cavallini, A.; Vittone, E.

doi:10.1088/0957-0233/19/10/102001

Cited by 261 publications

(189 citation statements)

References 138 publications

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“…A similar defect level has been attributed to the silicon vacancy [24], carbon vacancy, split interstitial or antisites after low energy electron irradiation [25]. It was observed that defect E 0.39 disappeared after leaving the sample at room temperature for a week, showing that the defect was not stable at room temperature.…”

Section: Deep Level Transient Spectroscopy Analysissupporting

confidence: 54%

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Omotoso

Meyer

Auret

et al. 2016

Physica B: Condensed Matter

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Irradiation experiments have been carried out on 1.9 × 10 16 cm -3 nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6 × 10 10 to 9.2 × 10 11 cm -2 . Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation,

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Section: Deep Level Transient Spectroscopy Analysissupporting

confidence: 54%

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Omotoso

Meyer

Auret

et al. 2016

Physica B: Condensed Matter

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“…Silicon is the workhorse for information technologies and photovoltaic photon harvesting, while SiC is a promising material for high power, high temperature and high frequency applications, because of its extreme thermal and chemical stability together with the large electron saturation velocity and mobility [3,4] and SiC has applications in light-emitting diodes [2][3][4], temperature sensors [5] and as neutron detectors [6,7]. The most stable of about 100 different SiC polytypes, the hexagonal 6H-SiC containing six SiC pairs per unit cell with the stacking sequence ABCACB [8] is the subject of this study.…”

Section: Introductionmentioning

confidence: 99%

Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

Miedema

Beye

Schiwietz

et al. 2014

Journal of Electron Spectroscopy and Related Phenomena

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The band gap of semiconductors like silicon and silicon carbide (SiC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p x-ray absorption spectroscopy (XAS), x-ray emission spectroscopy (XES) and resonant inelastic x-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45x10 -4 eV/K and a conduction-band slope of -1.334x10 -4 eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and non-resonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range.

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“…Most suitable semiconductors for harsh environment applications are Silicon-Carbide (SiC) and diamond thanks to their high atomic displacement energy, which is about 20-35 eV [1] for SiC and 40-50 eV [2] for diamond. The high displacement threshold energy makes them more radiation resistant than the conventional semiconductors such as Silicone (Si), Germanium (Ge) and Gallium Arsenide (GaAs) [3]. Moreover, the wide-bandgap energy and low intrinsic carrier concentration over considerable range of temperature make SiC and diamond interesting for use at high temperature applications.…”

Section: Introductionmentioning

confidence: 99%

Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

et al. 2018

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Abstract-Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C) and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV), wide band gap energy (3.27 eV) and high thermal conductivity (4.9 W/cm K), SiC can operate in harsh environment (high temperature, high pressure and high radiation level) without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutroninduced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV), higher threshold displacement energy (40-50 eV) and thermal conductivity (22 W/cm K), which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 10 10 n s -1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD) diamond detectors irradiated with 14 MeV neutrons at room temperature.Index Terms-4H-SiC, neutron detector, SiC neutron detector, Diamond neutron detector, fast neutron detection

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Silicon carbide and its use as a radiation detector material

Cited by 261 publications

References 138 publications

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

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