Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Omotoso, Ezekiel; Meyer, W.E.; Auret, F.D.; Diale, M.; Ngoepe, P.N.M.

doi:10.1016/j.physb.2015.08.014

Cited by 16 publications

(16 citation statements)

References 29 publications

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“…This value is consistent with carrier removal rate values of 6.5 × 10 3 –4 × 10 4 cm −1 reported in the literature for n‐type 4H‐SiC. [ 40–42 ] The model also predicts that the defect center ( N def ) that forms the second ionization energy ( E def ) is a shallow acceptor with an ionization energy of 0.12–0.13 eV. It is possible that the irradiation induces a shallow acceptor to form, as was found by Reshanov et al, [ 43 ] where a 0.15–0.18 eV acceptor‐like level was found in Al‐doped 6H‐SiC after H + and He + implantation.…”

Section: Resultssupporting

confidence: 88%

Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

Frye

Murphy

Shao

et al. 2020

Physica Status Solidi (b)

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Most electrical characterization of radiation damage to semiconductors is conducted on full devices or on low‐doped material. However, evaluating the radiation hardness is challenging in less mature semiconductor systems where low‐doped material is unavailable and full devices are difficult to realize. Herein, temperature‐dependent Hall effect measurements are used to demonstrate α particle‐induced radiation effects in p‐type 4H‐SiC with a room temperature hole concentration of 1.8×1017cm−3. The 4H‐SiC is irradiated by α particles from a 210Po source over a fluence of 1×1011–1×1013α cm−2. Modeling the hole concentration as a function of temperature shows that α radiation causes hole compensation through the introduction of hole traps. The radiation also induces a reduction in hole mobility due to an increase in defect‐related scattering centers. At low temperatures and increasingly higher fluences, the conduction mechanism changes from band conduction to another mechanism.

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Section: Resultssupporting

confidence: 88%

Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

Frye

Murphy

Shao

et al. 2020

Physica Status Solidi (b)

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“…At higher forward bias (i.e., >0.75 V), the characteristics of both diodes (pristine and selectively irradiated) would dominate by the series resistance . On the other hand, the conventional way irradiated SBDs show totally degraded forward bias characteristics which may be ascribed to the buried layer of defects in the reference/target material . The performance of conventionally irradiated SiC SBDs gives information about their radiation hardness capability.…”

Section: Resultsmentioning

confidence: 99%

“…In Table , the calculated values of BH, IF, and reverse leakage current densities reveals that used shadow mask process and quality of the devices seems good . The cause for observed non‐ideality in both SBDs may be due to quantum mechanical tunneling (QMT), field emission (FE), thermionic field emission (TFE), barrier height inhomogeneties, defects etc .…”

Section: Resultsmentioning

confidence: 99%

Tailoring Surface and Electrical Properties of Ni/4H‐nSiC Schottky Barrier Diodes via Selective Swift Heavy Ion Irradiation

Kumar

Maan

Akhtar

2018

Physica Status Solidi (a)

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In this experiment, the atomic scale surface and electrical properties of Ni/4H-nSiC Schottky barrier diode (SBD) are selectively modified (using a shadow mask with openings in active area i.e., Schottky contact, of the device only and covered remaining area) and irradiated with 200 MeV 107 Ag 14þ ions at a fluence of 10 13 ions cm À2 . The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics are discussed in detail to rationalize the performances of pristine and irradiated SBDs. Compared to pristine and conventional way irradiated (i.e., without any mask) SBDs, the I-V characteristics of selectively irradiated SBD show significant improvement in barrier height and leakage current. Atomic force microscopic (AFM) features of selectively irradiated SiC show modified surface properties at irradiated, masked, and transition sites. The observed AFM features are due to the quodons induced transient of atomic disorders/defects in crystalline SiC and their pile-up at transition site. This controlled way localization of defects reorder the atomic structure at the edges of SBD and thus improves its electrical characteristics. status solidi physica a Schottky Diodes www.pss-a.com

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“…Samples were cut into smaller sizes from the wafer. Before metallization of the ohmic contact on highly doped side (1.0 × 10 18 cm -3 ) of the sample, the degreasing and etching were carried out as described in refs [8,12,15,16]. Nickel ohmic contacts of 300 nm in thickness were thermally evaporated at a deposition rate of ~0.09 nm s −1 and vacuum pressure of ~2×10 -5 mbar.…”

Section: Methodsmentioning

confidence: 99%

“…The ohmic contacts were annealed in a quartz tube heated by a Linderberg Hevi-Duty furnace in flowing Ar at 950 °C for 10 minutes to reduce the contact (metalsemiconductor) resistance by the forming of nickel silicide. Prior to Schottky contact evaporation on the front (epi-layer) side of the samples, the samples were degreased as reported in refs [8,12,15,16]. Au/Ni Schottky contacts, 0.6 mm in diameter with a thickness of 200/800 nm, were thermally evaporated through a metal contact mask at very low deposition rate of ~0.02 nm s −1 and vacuum pressure of ~1×10 -5 mbar.…”

Section: Methodsmentioning

confidence: 99%

The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes

Omotoso

Meyer

Rensburg

et al. 2017

Nuclear Instruments and Methods in Physics Research Section B:

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Au/Ni (20:80) Schottky barrier diodes (SBDs) were resistively evaporated on nitrogen-doped n-type 4H-SiC. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the SDBs were investigated before and after bombardment with 1.8 MeV proton irradiation at a fluence of 2.0 × 10 12 cm -2 . The measurements were carried out in the temperature range 40 -300 K in steps of 20 K. Results obtained at room temperature (300 K) showed highly rectifying devices before and after bombardment. It was observed that the proton irradiation induced an increase of ideality factor from 1.05 to 1.13, a decrease in Schottky barrier height from 1.40 to 1.22 eV, an increase in series resistance from 10 to 66 Ω and a noticeable increase of the saturation current from 3.0 × 10 -21 to 6.8 × 10 -17 A. The increase in saturation current after proton irradiation was attributed to the presence of interfacial states created by irradiation-induced defects. Thermionic emission dominated the I-V characteristics in the temperature range 120 -300 K but the I-V characteristics deviated from thermionic emission theory at temperatures below 120 K for devices both before and after irradiation. The variation of the SBDs characteristics with temperature was attributed to the presence of lateral inhomogeneities of the SBH. Modified Richardson constants were determined from a Gaussian distribution of barrier heights to be 133 and 165 A cm -2 K -2 before and after irradiation, respectively.

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Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Cited by 16 publications

References 29 publications

Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC

Tailoring Surface and Electrical Properties of Ni/4H‐nSiC Schottky Barrier Diodes via Selective Swift Heavy Ion Irradiation

The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes

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