Abstract:In the present contribution the effect of the processing steps on the characteristics of ribbon-, cast-multicrystalline and Cz monocrystalline Si is investigated by SPV (Surface PhotoVoltage) analyses. The minority carrier diffusion length L D has been measured by SPV in noncontact and non-destructive mode at the different processing steps employed in solar cell processing. The diffusion length, related to the material recombination properties, increases after the emitter diffusion process and increases after … Show more
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