Effect of defects properties on InP-based high electron mobility transistors*

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This paper proposes a reasonable radiation-resistant composite channel structure for InP HEMTs. The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement. Moreover, the direct current (DC) and radio frequency (RF) characteristics and their reliability between the single channel structure and the composite channel structure after 75-keV proton irradiation are compared in detail. The results show that the composite channel structure has excellent radiation tolerance. Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect. This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.

Section: Vacancy Profilementioning

confidence: 99%

A comparative study on radiation reliability of composite channel InP high electron mobility transistors*

Zhang¹,

Ding²,

Jin³

et al. 2021

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“…Due to high frequency, high gain, low power consumption, and low noise performance, InP-based high electron mobility transistors (HEMTs) are one of the most promising semiconductor devices for millimeter-wave and terahertz monolithic integrated circuits. [1][2][3][4][5] The excellent performance is attributed to high carrier density, high electron velocity, and low gate leakage current. A cutoff frequency ( f T ) of over 700 GHz using 25-nm gate was reported in InPbased HEMTs [6] .…”

Section: Introductionmentioning

confidence: 99%

Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs

Cao¹,

Feng²,

Wang³

et al. 2022

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In this work, a set of 100-nm gate-length InP-based HEMTs were designed and fabricated with different gate offsets in gate recess. A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography. DC and RF measurement was conducted. With the gate offset varying from drain side to source side, the maximum drain current (Ids,max) and transconductance (gm,max) increased. In the meantime, f T decreased while f max increased, and the highest f max of 1096 GHz was obtained. It can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source resistance. Output conductance was also suppressed by gate offset toward source side. This provides simple and flexible device parameter selection for HEMTs of different usage.

“…The InAlAs/InGaAs InP-based high electron mobility transistors (InP-based HEMTs) can be one of the best candidate devices to achieve the ultrahigh-speed operation because of their high electron mobility, high electron velocities, and high sheet electron densities, which have been successfully used in high frequency, low noise, high gain IC designs, and widely applied to high frequency systems. [1][2][3][4] A variety of effective methods have been reported to greatly improve the device performances, for example electron beam lithography scaling down gate length, improving Ohmic contact process, and accurately controlling gate recess. [5,6] Up to date, high current gain cutoff frequency ( f t ) over 600 GHz and power gain cutoff frequency ( f max ) in excess of 1 THz have been achieved by scaling gate length down to sub 50 nm.…”

Section: Introductionmentioning

confidence: 99%

Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs*

Tong

Ding

et al. 2021

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The T-gate stem height of InAlAs/InGaAs InP-based high electron mobility transistor (HEMT) is increased from 165 nm to 250 nm. The influences of increasing the gate stem height on the direct current (DC) and radio frequency (RF) performances of device are investigated. A 120-nm-long gate, 250-nm-high gate stem device exhibits a higher threshold voltage (V th) of 60 mV than a 120-nm-long gate devices with a short gate stem, caused by more Pt distributions on the gate foot edges of the high Ti/Pt/Au gate. The Pt distribution in Schottky contact metal is found to increase with the gate stem height or the gate length increasing, and thus enhancing the Schottky barrier height and expanding the gate length, which can be due to the increased internal tensile stress of Pt. The more Pt distributions for the high gate stem device also lead to more obvious Pt sinking, which reduces the distance between the gate and the InGaAs channel so that the transconductance (g m) of the high gate stem device is 70 mS/mm larger than that of the short stem device. As for the RF performances, the gate extrinsic parasitic capacitance decreases and the intrinsic transconductance increases after the gate stem height has been increased, so the RF performances of device are obviously improved. The high gate stem device yields a maximum f t of 270 GHz and f max of 460 GHz, while the short gate stem device has a maximum f t of 240 GHz and the f max of 370 GHz.