An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of InP-based HEMTs. Moreover, direct current (DC) and radio frequency (RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5 × 1011 cm−2, 1 × 1012 cm−2, and 5 × 1012 cm−2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5 × 1012 cm−2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.
The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through induced defects. The effects of the defect type, defect energy level with respect to conduction band E
T, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model. The results indicate that only acceptor-like defects have a significant influence on device operation. Meanwhile, as defect energy level E
T shifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with E
T above 0.5 eV. This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more. Additionally, the drain current and transconductance degrade more severely with larger acceptor concentration. These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.
In this paper, an improved charge control model is proposed to investigate the effect of proton irradiation on InP‐based high electron mobility transistor (HEMT) with fluence varying among 0, 1 × 1011, 5 × 1011, 1 × 1012, and 2 × 1012 cm−2. The non‐uniform acceptor‐like defects in InAlAs/InGaAs hetero‐junction layers have been taken into account in the charge control model of the device after proton irradiation. The simulated characteristics by the charge control model have shown compatible trend with experimental data. The calculated results show that the channel current, transconductance, and current gain cutoff frequency depict a decline trend with the increase of proton fluence, and the pinch‐off voltage drifts toward positive value. Moreover, the performances gradually begin to degrade after the proton fluence reaches 5 × 1011 cm−2, and deteriorate dramatically with proton fluence up to 2 × 1012 cm−2. The observed obvious variation of electrical properties with different proton fluence could be accounted for by the carrier sheet density reduction, which is a result of the carrier removal effect from induced As acceptor‐like defects.
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