An improved empirical nonlinear model for InP-based HEMTs

Zhong, Yinghui; Wang, Wenbin; Yang, Jie; Sun, Shuxiang; Chang, Ming-Ming; Duan, Zhiyong; Jin, Zhi; Ding, Peng

doi:10.1016/j.sse.2019.05.009

Cited by 11 publications

(10 citation statements)

References 9 publications

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“…This phenomenon can be explained by the surface and channel charge trap effects when bias voltages are high enough to influence carrier drift. On the other hand, using the empirical values

V_{dso} = 1 V

22 and

V_{ch} = 1 V

contributes to the simulation results far away from the measured ones. Therefore, a specific extraction procedure of

V_{dso}

and

V_{ch}

with formula explanations is presented as follows instead of the ordinary method based on either physical significance or the default values.…”

Section: Parameter Extractionmentioning

confidence: 77%

“…Even though this commercial model is not as precise as the Angelov model which also takes the derivative of transconductance into account, it does make a relative progress in predicting the DC and RF characteristics compared with the conventional MESFET models. The EEHEMT model, as the most used commercial model, especially for III–V HEMTs has been under investigation for many years 19–23 . As far as we known, due to mechanism of two‐dimensional electron gas (2DEG), the carrier transport from Si‐doping plane to barrier layer is associated with the gate‐source voltage.…”

Section: Introductionmentioning

confidence: 99%

“…The EEHEMT model, as the most used commercial model, especially for III-V HEMTs has been under investigation for many years. [19][20][21][22][23] As far as we known, due to mechanism of two-dimensional electron gas (2DEG), the carrier transport from Si-doping plane to barrier layer is associated with the gate-source voltage. As a consequence of that, the coefficient of output conductance (κ) should be regarded as a function of V gs under normal operating condition instead of a constant used in the conventional EEHEMT model.…”

Section: Introductionmentioning

confidence: 99%

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Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

Zhang

Gao

2023

Int J Numerical Modelling

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A direct parameter extraction method of EEHEMT nonlinear empirical model is proposed in this paper. An improved DC model is also presented by considering the channel length modulation parameter () as a function of gate‐to‐source voltage. Model verification is carried out by comparison of measured and simulated current–voltage characteristics and S‐parameters. Good agreement is obtained between the measured and modeled results for 2 × 15 μm gatewidth (number of gate fingers × gatewidth) 70‐nm gatelength InP high electron mobility transistors (HEMT). An increased accuracy in modeling the I–V and RF characteristics is also obtained in the proposed model, compared with the conventional one.

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“…This phenomenon can be explained by the surface and channel charge trap effects when bias voltages are high enough to influence carrier drift. On the other hand, using the empirical values

V_{dso} = 1 V

22 and

V_{ch} = 1 V

contributes to the simulation results far away from the measured ones. Therefore, a specific extraction procedure of

V_{dso}

and

V_{ch}

with formula explanations is presented as follows instead of the ordinary method based on either physical significance or the default values.…”

Section: Parameter Extractionmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

Zhang

Gao

2023

Int J Numerical Modelling

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“…Parameters of the small-signal equivalent circuit model were extracted and compared based on Rorsman's method [17] and our previous research. [18][19][20] Figure 7 illustrates the changes in key parameters, and Table 1 lists some related small-signal model parameters of 0.8-µm-recess devices. The small-signal model was then simulated with extracted parameter values.…”

Section: Rf Characteristicsmentioning

confidence: 99%

Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs

Cao¹,

Feng²,

Wang³

et al. 2022

Chinese Phys. B

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In this work, a set of 100-nm gate-length InP-based HEMTs were designed and fabricated with different gate offsets in gate recess. A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography. DC and RF measurement was conducted. With the gate offset varying from drain side to source side, the maximum drain current (Ids,max) and transconductance (gm,max) increased. In the meantime, f T decreased while f max increased, and the highest f max of 1096 GHz was obtained. It can be explained by the increase of gate-source capacitance and the decrease of gate-drain capacitance and source resistance. Output conductance was also suppressed by gate offset toward source side. This provides simple and flexible device parameter selection for HEMTs of different usage.

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“…The InAlAs/InGaAs InP-based high electron mobility transistors (InP-based HEMTs) can be one of the best candidate devices to achieve the ultrahigh-speed operation because of their high electron mobility, high electron velocities, and high sheet electron densities, which have been successfully used in high frequency, low noise, high gain IC designs, and widely applied to high frequency systems. [1][2][3][4] A variety of effective methods have been reported to greatly improve the device performances, for example electron beam lithography scaling down gate length, improving Ohmic contact process, and accurately controlling gate recess. [5,6] Up to date, high current gain cutoff frequency ( f t ) over 600 GHz and power gain cutoff frequency ( f max ) in excess of 1 THz have been achieved by scaling gate length down to sub 50 nm.…”

Section: Introductionmentioning

confidence: 99%

Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs*

Tong

Ding

et al. 2021

Chinese Phys. B

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The T-gate stem height of InAlAs/InGaAs InP-based high electron mobility transistor (HEMT) is increased from 165 nm to 250 nm. The influences of increasing the gate stem height on the direct current (DC) and radio frequency (RF) performances of device are investigated. A 120-nm-long gate, 250-nm-high gate stem device exhibits a higher threshold voltage (V th) of 60 mV than a 120-nm-long gate devices with a short gate stem, caused by more Pt distributions on the gate foot edges of the high Ti/Pt/Au gate. The Pt distribution in Schottky contact metal is found to increase with the gate stem height or the gate length increasing, and thus enhancing the Schottky barrier height and expanding the gate length, which can be due to the increased internal tensile stress of Pt. The more Pt distributions for the high gate stem device also lead to more obvious Pt sinking, which reduces the distance between the gate and the InGaAs channel so that the transconductance (g m) of the high gate stem device is 70 mS/mm larger than that of the short stem device. As for the RF performances, the gate extrinsic parasitic capacitance decreases and the intrinsic transconductance increases after the gate stem height has been increased, so the RF performances of device are obviously improved. The high gate stem device yields a maximum f t of 270 GHz and f max of 460 GHz, while the short gate stem device has a maximum f t of 240 GHz and the f max of 370 GHz.

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An improved empirical nonlinear model for InP-based HEMTs

Cited by 11 publications

References 9 publications

Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

Direct parameter extraction method of EEHEMT nonlinear model for InP HEMT

Impact of gate offset in gate recess on DC and RF performance of InAlAs/InGaAs InP-based HEMTs

Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs*

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