Abstract:In this work, a set of 100-nm gate-length InP-based HEMTs were designed and fabricated with different gate offsets in gate recess. A novel technology was proposed for independent definition of gate recess and T-shaped gate by electron beam lithography. DC and RF measurement was conducted. With the gate offset varying from drain side to source side, the maximum drain current (Ids,max) and transconductance (gm,max) increased. In the meantime, f
T decreased while f
max increase… Show more
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