Proton Irradiation Effect on InP‐Based High Electron Mobility Transistor by Numerical Simulation with Non‐Uniform Induced Acceptor‐Like Defects

Abstract

In this paper, an improved charge control model is proposed to investigate the effect of proton irradiation on InP‐based high electron mobility transistor (HEMT) with fluence varying among 0, 1 × 1011, 5 × 1011, 1 × 1012, and 2 × 1012 cm−2. The non‐uniform acceptor‐like defects in InAlAs/InGaAs hetero‐junction layers have been taken into account in the charge control model of the device after proton irradiation. The simulated characteristics by the charge control model have shown compatible trend with experimental data. The calculated results show that the channel current, transconductance, and current gain cutoff frequency depict a decline trend with the increase of proton fluence, and the pinch‐off voltage drifts toward positive value. Moreover, the performances gradually begin to degrade after the proton fluence reaches 5 × 1011 cm−2, and deteriorate dramatically with proton fluence up to 2 × 1012 cm−2. The observed obvious variation of electrical properties with different proton fluence could be accounted for by the carrier sheet density reduction, which is a result of the carrier removal effect from induced As acceptor‐like defects.

Electron radiation impact on the kink effect in S 22 of InP-based high electron mobility transistors

“…The complex and changeable space environment often allows spacecraft to be exposed to various high-energy particles and rays, which thus results in a * Author to whom any correspondence should be addressed. dramatic degradation of the electrical characteristics of semiconductor devices [5][6][7][8][9][10]. The radiation damage and related mechanisms are the most fundamental basis for proposing hardness measures to ensure a high reliability and long life of semiconductor devices in space applications.…”

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“…It is well-known that space equipments mostly operate at the van Allen radiation belt, which mainly include protons and electrons [11,12]. When semiconductor devices work in this environment, the radiation resistance of semiconductor devices must be established, due to the fact that performances of device will become deteriorated with irradiation time and dose [13,14].…”

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

“…[12,13] Nevertheless, there are some existing exploratory research on the proton irradiation effects of the various III-V materials devices. [14][15][16][17] As a result, the degradation degree of the device characteristics after proton irradiation is directly related to the amount of vacancy defects which are caused by displacement effect, and this damage mechanism has gained wide consensus. [18] The reliability research of III-V devices about proton irradiation rarely involves anti-radiation device structure and technology techniques.…”