Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications

Glaser, John; Nasadoski, Jeffrey; Losee, Peter A.; Kashyap, Avinash S.; Matocha, Kevin; Garrett, J.L.; Stevanovic, Ljubisa

doi:10.1109/apec.2011.5744724

Cited by 83 publications

(26 citation statements)

References 12 publications

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“…15 with parameters given in table III are included. Commercial CMF10120D Silicon Carbide MOSFET was chosen for switching due to significantly lower switching losses, high switching frequency and high temperature tolerance [21], [22] thanks to SiC technology. A matching transformer with 12 turn in primary and 1 turn in secondary is used.…”

Section: Resultsmentioning

confidence: 99%

“…These diodes are superior to similar Si diodes in terms of characteristics. In past few years, a great progress has been done on SiC switches like JFET, BJT, IGBT and MOSFET [22][23]. Considering efficiency, gap between Si and SiC at high frequency [21], [17][18], [24][25] increases, so this idea is proved through this paper for induction heating based on high frequency resonant converters.…”

Section: Sic Application For Induction Heatingmentioning

confidence: 98%

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A novel AC-AC converter based SiC for domestic induction cooking applications

Salehifar

Moreno-Eguilaz

Sala

et al. 2013

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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this paper presents the analysis and design of a new high frequency ac-ac converter applied to domestic induction heating. The proposed topology uses only four switches to control power. Converter operation is same as a conventional class D inverter. Working above the resonant frequency, a sinusoidal input current and a unit power factor are obtained. To bring higher efficiency and power density, application of emerging SiC technology in proposed converter has been evaluated. The analytical and simulation results have been verified by means of a 380-W induction heating prototype.

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Section: Resultsmentioning

confidence: 99%

Section: Sic Application For Induction Heatingmentioning

confidence: 98%

A novel AC-AC converter based SiC for domestic induction cooking applications

Salehifar

Moreno-Eguilaz

Sala

et al. 2013

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…Switch Turn On converter [17]. In this configuration, power recirculates from one converter to another, thus voltage source (V BUS ) provides only power to compensate for the losses in the circuit (Fig.…”

Section: Switch Turn Offmentioning

confidence: 99%

“…Once the dead-time period is over, the MOS channel can be gated on to reduce conduction losses by conducting current in the reverse direction -a synchronous rectification mode [17]. Since SiC MOSFET's body diode has a much lower recovery charge than its Si counterpart, concerns about impact of body diode on the inverter losses is alleviated.…”

Section: Series Connection Of Sic Mosfets -Applications Perspectivementioning

confidence: 99%

Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications

Bolotnikov

Losee

Permuy

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper presents the latest 1.2kV-2.2kV SiC MOSFETs designed to maximize SiC device benefits for highpower, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm x 4.5mm were fabricated, exhibiting room temperature on-resistances of 34mOhm, 39mOhm and 41mOhm, respectively. The ability to safely withstand single-pulse avalanche energies of over 17J/cm 2 is demonstrated. Next, the 1.7kV SiC MOSFETs were used to fabricate half-bridge power modules. The module typical onresistance was 7mOhm at Tj=25 o C and 11mOhm at 150 o C. The module exhibits 9mJ turn-on and 14mJ turn-off losses at Vds=900V, Id=400A. Validation of GE's SiC MOSFET performance advantages was done through continuous buckboost operation with three 1.7kV modules per phase leg exhibiting 99.4% efficiency. Device ruggedness and tolerance to terrestrial cosmic radiation was evaluated. Experimental results show that higher voltage devices (2.2kV and 3.3kV) are more susceptible to cosmic radiation, requiring up to 45% derating in order to achieve module failure rate of 100 FIT, while 1.2kV MOSFETs require only 25% derating to deliver similar FIT rate. Finally, the feasibility of medium voltage power conversion based on series connected 1.2kV SiC MOSFETs with body diode is demonstrated.

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“…As availability of Silicon (Si) MOSFETs with lower Rds (on) is limited to lower voltage levels, getting MOSFETs with 1kv or higher to meet derating guide line (as input power bus voltage varies from 250 to 350V) with less on state resistance Rds (on) is a challenge and higher power loss results in expensive thermal design which makes the product cost to go high. Hence to optimize the efficiency, the SiC (Silicon Carbide) MOSFETs have been selected as they offer better performance parameters compared to silicon based MOSFETs [10][11][12][13][14] at higher input voltages. Forward converter topology has been selected with current mode control to design the converter.…”

Section: Introductionmentioning

confidence: 99%

220W DC-DC converter for aerospace applications

Kiran¹,

Singh²,

Chippalkatti³

et al. 2014

2014 International Conference on Advances in Electronics Computers and Communications

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This paper addresses design issues involved in development of high voltage DC-DC converters such as optimizing isolation transformer parameters (leakage, proximity and Skin Effect), Power MOSFET losses and achieving tight voltage regulation (0.1%) used in Transmit Receive Multi Modules (TRMM). A modified transformer interleaving winding technique is implemented to reduce Skin, Proximity and leakage inductance which are associated with high voltage and high frequency. The proposed techniques are implemented in a proto type of 220W dc-dc converter designed with RCD forward converter topology with current mode control. Silicon Carbide (SiC) MOSFETS are used to improve efficiency of converter. 220W dc-dc converter is having the features of very good regulation (<0.1%), Ripple and Spike Voltage (<1%) and high Efficiency (>75%) in all operating conditions and meets MIL-STD-704E/F. The proto is developed in dimensions of 125mm×60mm.

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Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications

Cited by 83 publications

References 12 publications

A novel AC-AC converter based SiC for domestic induction cooking applications

A novel AC-AC converter based SiC for domestic induction cooking applications

Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications

220W DC-DC converter for aerospace applications

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Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications

Cited by 83 publications

References 12 publications

A novel AC-AC converter based SiC for domestic induction cooking applications

A novel AC-AC converter based SiC for domestic induction cooking applications

Overview of 1.2kV &#x2013; 2.2kV SiC MOSFETs targeted for industrial power conversion applications

220W DC-DC converter for aerospace applications

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Overview of 1.2kV – 2.2kV SiC MOSFETs targeted for industrial power conversion applications