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To meet increasing demand for higher reliability in power electronics converters applicable in electric vehicles, fault detection (FD) is an important part of the control algorithm. In this study, a model-based open transistor fault diagnsosis method is presented for a voltage-source inverter (VSI) supplying a five-phase permanent magnet motor drive. To realise this goal, a model-based observer is designed to estimate model parameters. After that, the estimated parameters are used to design a sliding mode observer in order to estimate the phase current in an ideal model. Subsequently, the proposed FD technique measures the similarity between the estimated current and real current using cross-correlation factor. This factor is used for the first time in this study to define a FD index in VSI. The presented FD scheme is simple and fast; also, it is able to detect multiple open switch or open phase faults in contrast to conventional methods. On the other side, in order to track reference current of the motor, the estimated parameters are used to design a proportional resonant controller. The FD technique is used to operate a multiphase fault-tolerant brushless direct current (BLDC) motor drive. Experimental results on a five-phase BLDC motor with in-wheel outer rotor applicable in electrical vehicles are conducted to validate the theory.Postprint (author’s final draft

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The trend in power electronic applications is to reach higher power density and higher efficiency. Currently, the wide band-gap devices such as Silicon Carbide MOSFET (SiC MOSFET) are of great interest because they can work at higher switching frequency with low losses. The increase of the switching speed in power devices leads to high power density systems. However, this can generate problems such as overshoots, oscillations, additional losses and electromagnetic interference (EMI). In this paper, a novel active gate driver (AGD) for improving the SiC MOSFET switching trajectory with high performance is presented. The AGD is an open-loop control system and its principle is based on gate energy decrease with a gate resistance increment during the Miller Plateau effect on gatesource voltage. The proposed AGD has been designed and validated through experimental tests for high-frequency operation. Moreover, an EMI discussion and a performance analysis were realized for the AGD. The results show that the AGD can reduce the overshoots, oscillations and losses without compromising the EMI. Besides, the AGD can control the turn-on and turn-off transitions separately and it is suitable for working with asymmetrical supplies required by SiC MOSFETs.

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