Deposition Technologies of Materials for Cu-Interconnects

Gupta, T. K.

doi:10.1007/978-1-4419-0076-0_5

Cited by 11 publications

(10 citation statements)

References 125 publications

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“…Colour of freshly prepared ethaline-0.2 M CuCl2.2H2O melt [1]. The colour of the melt after a period of deposition [2], using a soluble anode (A), and inert anode (B).…”

Section: Figurementioning

confidence: 99%

“…Electrodeposition of copper has been carried out from aqueous solutions for a variety of applications [1][2][3][4]. Aqueous acid and alkaline solutions have been employed due to their high current efficiency [1,4,5], good throwing power [6,7], relatively high plating rates [1,2] and low cost [1]. Some of these electrolytes have come under scrutiny for their environmental impact [8][9], and in certain cases, the associated health and safety issues [10].…”

Section: Introductionmentioning

confidence: 99%

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Electrochemical copper deposition from an ethaline-CuCl2·2H2O DES

Ghosh

Roy

2014

Surface and Coatings Technology

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Cu electroplating was carried out using a pure ethaline melt, a 1:2 ratio of choline chloride and ethylene glycol, at room temperature by potentiostatic and galvanostatic methods. Hydrated cupric chloride was added to the pure ethaline melt. Polarisation data for cupric ion reduction to copper was collected using an RDE to determine where metal deposition was feasible. Smooth Cu deposits were obtained at -4.7×10-3A/cm2 using 0.2M CuCl2·2H2O at 25°C at a current efficiency of (95±5)% at a rotation speed of 700rpm. XRD analysis of the deposit showed a polycrystalline face centred cubic structure with (111) texture. The crystalline size was 66±10nm with some internal strain. EDX analysis showed the presence of carbon and chlorine with copper in the deposit, which was due to the break-down of the DES. Several deposition processes were carried out from a single bath to examine bath stability. The bath was found to be stable when a soluble anode was employed, and became unstable when an insoluble anode was used due to other reactions proceeding at the cathode

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“…Colour of freshly prepared ethaline-0.2 M CuCl2.2H2O melt [1]. The colour of the melt after a period of deposition [2], using a soluble anode (A), and inert anode (B).…”

Section: Figurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrochemical copper deposition from an ethaline-CuCl2·2H2O DES

Ghosh

Roy

2014

Surface and Coatings Technology

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“…The decreasing interconnect performance can only be mitigated through the innovation of materials. Such a materials’ innovation was the replacement of Al by Cu at the 250 nm technology node. − Since then, the interconnect half pitch (the wire width) has decreased strongly, reaching sub-30 nm in the current 14 nm technology node. In the next decade, interconnect half pitches are expected to reach dimensions of 10 nm and below .…”

Section: Introductionmentioning

confidence: 99%

“…Besides, ever increasing current densities in the interconnect wires lead to reliability limitations due to electromigration. In addition, the charge transport in such narrow lines is progressively influenced by surface and grain boundary scattering resulting in a resistivity that exceeds largely that of bulk Cu. − Moreover, Cu metallization requires barrier layers (e.g., TaN- or Mn-based) to avoid Cu ion drift and diffusion into the surrounding dielectric and the ensuing dielectric breakdown. − , Liner layers (e.g., Ta, or more recently Co or Ru) between the TaN barrier and the Cu metallization are also necessary. Co-liners were introduced to allow thinner seeds, and Ru-liners were introduced to allow direct plating.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

Wen

Roussel

Pedreira

et al. 2016

ACS Appl. Mater. Interfaces

104

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Atomic layer deposition of ruthenium is studied as a barrierless metallization solution for future sub-10 nm interconnect technology nodes. We demonstrate the void-free filling in sub-10 nm wide single damascene lines using an ALD process in combination with 2.5 Å of ALD TiN interface and postdeposition annealing. At such small dimensions, the ruthenium effective resistance depends less on the scaling than that of Cu/barrier systems. Ruthenium effective resistance potentially crosses the Cu curve at 14 and 10 nm according to the semiempirical interconnect resistance model for advanced technology nodes. These extremely scaled ruthenium lines show excellent electromigration behavior. Time-dependent dielectric breakdown measurements reveal negligible ruthenium ion drift into low-κ dielectrics up to 200 °C, demonstrating that ruthenium can be used as a barrierless metallization in interconnects. These results indicate that ruthenium is highly promising as a replacement to Cu as the metallization solution for future technology nodes.

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“…[2][3][4] The BEOL CMP process typically requires multiple major planarization steps shown in Figures 1 and 2. The initial step is Cu CMP where the Cu overburden is removed and preferably CMP is stopped on liner ( Figure 1).…”

mentioning

confidence: 99%

BEOL Cu CMP Process Evaluation for Advanced Technology Nodes

Tanwar

Canaperi

Lofaro

et al. 2013

J. Electrochem. Soc.

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The back end of the line (BEOL) copper (Cu) interconnect line width and spacing is decreasing with each advancement in technology node. It is important to understand how the decreasing dimensions will impact BEOL chemical mechanical planarization (CMP) process. This study is focused on evaluation of Cu CMP using three categories of slurry formulations (i.e. alumina abrasive, silica abrasive and abrasive-less) by utilizing test structures with dimensions relevant to sub-20 nm technology. The results presented in this study show the key factors driving the performance of slurry formulation (e.g. liner selectivity, defects) are strongly dependent on the copper (Cu) interconnect line width and spacing. The results show the blanket rate selectivity does not translate to equivalent selectivity on patterned structures. In addition, the slurry formulations lost selectivity to liner as interconnect width/spacing is reduced from 40 nm to 32 nm highlighting the need to account for pattern density when predicting selectivity. Furthermore, evaluation of Cu CMP slurry formulations with cobalt (Co) liner indicates that existing formulations exhibit no Cu to Co selectivity. Overall, the results on multiple interconnect dimensions from this study are very important for researchers focused on slurry formulation development and CMP modeling.

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Deposition Technologies of Materials for Cu-Interconnects

Cited by 11 publications

References 125 publications

Electrochemical copper deposition from an ethaline-CuCl2·2H2O DES

Electrochemical copper deposition from an ethaline-CuCl2·2H2O DES

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

BEOL Cu CMP Process Evaluation for Advanced Technology Nodes

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