A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si CbaMek. MotivationCarrier transport enhancement induced by strain has led to much interest in using strained Si to improve current drive in Si MOSFETs.

SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/chemical vapor deposition process at 550 °C. An electron mobility of 40 000 cm2/V s in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate.

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