2010 IEEE International Interconnect Technology Conference 2010
DOI: 10.1109/iitc.2010.5510584
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CVD Co and its application to Cu damascene interconnections

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Cited by 50 publications
(45 citation statements)
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“…They emphasized two main advantages of CVD Co metallization which are a) CVD Co precursors do not damage the Ti liner enabling barrier scaling and b) it achieves void free fill in high aspect ratio features without defects, something that is difficult to achieve with a conventional physical vapor deposited (PVD) Co process. 8,9 Hence, CVD-based Co metallization is an attractive option for the technology nodes below 10 nm.CVD-based cobalt has also gained prominence in the advanced copper interconnects below 22 nm as liner [10][11][12][13][14][15][16][17] to improve adhesion between the barrier (TaN, TiN) and Cu seed layer where the Co film thickness is only ∼2 nm. Several authors 18-26 have investigated cobalt polishing for such applications where RR requirements are typically <20 nm/min and Co loss due to corrosion has to be as close to zero as possible, since even a minute loss of Co material can degrade the device reliability significantly.…”
mentioning
confidence: 99%
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“…They emphasized two main advantages of CVD Co metallization which are a) CVD Co precursors do not damage the Ti liner enabling barrier scaling and b) it achieves void free fill in high aspect ratio features without defects, something that is difficult to achieve with a conventional physical vapor deposited (PVD) Co process. 8,9 Hence, CVD-based Co metallization is an attractive option for the technology nodes below 10 nm.CVD-based cobalt has also gained prominence in the advanced copper interconnects below 22 nm as liner [10][11][12][13][14][15][16][17] to improve adhesion between the barrier (TaN, TiN) and Cu seed layer where the Co film thickness is only ∼2 nm. Several authors 18-26 have investigated cobalt polishing for such applications where RR requirements are typically <20 nm/min and Co loss due to corrosion has to be as close to zero as possible, since even a minute loss of Co material can degrade the device reliability significantly.…”
mentioning
confidence: 99%
“…CVD-based cobalt has also gained prominence in the advanced copper interconnects below 22 nm as liner [10][11][12][13][14][15][16][17] to improve adhesion between the barrier (TaN, TiN) and Cu seed layer where the Co film thickness is only ∼2 nm. Several authors [18][19][20][21][22][23][24][25][26] have investigated cobalt polishing for such applications where RR requirements are typically <20 nm/min and Co loss due to corrosion has to be as close to zero as possible, since even a minute loss of Co material can degrade the device reliability significantly.…”
mentioning
confidence: 99%
“…Good adhesion with Cu is particularly important because, with current ULSI Cu interconnects, reliability is an important issue, and the adhesion of Cu with the underlayer is currently an area for further improvement. Such screening has already been carried out, resulting in the following candidate materials: Ru, [29][30][31][32][33] Co, [19][20][21][22][23][24] and Ta. [16][17][18] Among these elements, the underlayer material that is most favorable in terms of Cu nucleation should be selected based on solution (I); i.e., it should provide a small γ int and a small θ.…”
Section: Strategymentioning
confidence: 99%
“…Kim et al succeeded in forming ultra-thin (< 9-nm-thick) continuous Cu films, employing oxynitiride during CVD growth of Cu to lower the surface energy of the films, together with a subsequent reduction step. 15 However, this approach is not compatible with Ta [16][17][18] -and Co [19][20][21][22][23][24] -based underlayers due to oxidation during CuON deposition, which leads to poor adhesion between the Cu layer and the underlayers, as TaO x and CoO x were not reduced during the process. Au et al succeeded in filling narrow trenches (∼17 nm-wide) with Cu, employing iodine-catalyzed CVD of Cu onto Mn 4 N underlayer.…”
mentioning
confidence: 99%
“…However, for future technologies scaling Co thickness is challenging due to the loss of Co Cu plating solutions and CMP, resulting in sidewall voids and poor reliability. [7][8][9][10] Ru is also a good wetting layer for Cu. Ru has better corrosion resistance in Cu plating solutions compared to Co and is a good substrate for PVD Cu reflow fill processes.…”
mentioning
confidence: 99%