Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

As, D. J.; Potthast, S.; Fernandez, J.R.L.; Lischka, K.; Nagasawa, Hiroyuki; Abe, Masayuki

doi:10.1016/j.mee.2005.10.020

Cited by 9 publications

(10 citation statements)

References 9 publications

(9 reference statements)

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“…Therefore, GaN and some other compounds have been studied extensively for their applications in short wavelength optical and high-power/temperature devices, such as light emitting diodes (LEDs), laser diodes (LDs), metal-semiconductor (MS) Schottky barrier diodes (SBDs), metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs). GaN high-electron-mobility transistors (HEMTs) with Schottky/rectifier metal contact have demonstrated excellent highfrequency, high-power, high temperature and recently good microwave-noise characteristics [1][2][3][4][5][6][7][8][9][10]. The performance level of GaN/ AlGaN HEMT devices has increased rapidly over the last few years.…”

Section: Introductionmentioning

confidence: 99%

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Tekeli

Gökçen

Altındal

et al. 2011

Microelectronics Reliability

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a b s t r a c tThe voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (e 0 ), dielectric loss (e 00 ), dielectric loss tangent (tan d) and real and imaginary part of electrical modulus (V 0 and M 00 ) of the (Ni/Au)/GaN/Al 0.3 Ga 0.7 N heterostructures have been investigated by using experimental admittance spectroscopy (capacitance-voltage (C-V) and conductance-voltage (G/w-V)) measurements at room temperature. Experimental results show that the values of the e 0 , e 00 , tan d and the real and imaginary parts of the electric modulus (V 0 and M 00 ) obtained from the C and G/w measurements were found to be strong function of frequency and applied bias voltage especially in depletion region at low frequencies. These changes in dielectric parameters can be attributed to the interfacial GaN cap layer, interface polarization and a continuous density distribution of interface states and their relaxation time at metal/semiconductor interface. While the values of the e 0 decrease with increasing frequencies, tan d, V 0 and M 00 increase with the increasing frequency. Also, the dielectric loss (e 00 ) have a local maximum at about frequency of 100 kHz. It can be concluded that the interface polarization can occur more easily at low frequencies with the number of interface states located at the metal/semiconductor interface.

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Section: Introductionmentioning

confidence: 99%

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Tekeli

Gökçen

Altındal

et al. 2011

Microelectronics Reliability

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“…Mostly, c-GaN is deposited using the molecular beam epitaxy (MBE) technique due to the lower process temperatures in comparison to metal organic CVD (MOCVD). By depositing under Ga-rich conditions the metastable cubic polytype could be stabilized, whereas the amount of inclusions of the thermodynamically stable hexagonal polytype of GaN (h-GaN) was minimized [31][32][33]. Within this MBE growth regime, functional devices like green light-emitting cubic InGaN/GaN multi-quantum-well structures could be achieved [34].…”

Section: Introductionmentioning

confidence: 99%

Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si

Häberlen¹,

Gerlach²,

Murphy³

et al. 2010

Journal of Crystal Growth

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“…(001) oriented self supported 3C-SiC substrates have been used for growing cubic GaN based heterostructures [7]. (001) oriented self supported 3C-SiC substrates have been used for growing cubic GaN based heterostructures [7].…”

Section: Introductionmentioning

confidence: 99%

Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

Cordier¹,

Portail²,

Chenot³

et al. 2008

MRS Proc.

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In this work, we study cubic SiC/Si (111) templates as an alternative for growing GaN on silicon. We first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. Then, AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these templates. Both the structural quality and the behavior of transistors realized on these structures show the feasibility of this approach.

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Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

Cited by 9 publications

References 9 publications

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si

Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

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