Allowing subwavelength-scale-digitization of optical wavefronts to achieve complete control of light at interfaces, metasurfaces are particularly suited for the realization of planar phase-holograms that promise new applications in high-capacity information technologies. Similarly, the use of orbital angular momentum of light as a new degree of freedom for information processing can further improve the bandwidth of optical communications. However, due to the lack of orbital angular momentum selectivity in the design of conventional holograms, their utilization as an information carrier for holography has never been implemented. Here we demonstrate metasurface orbital angular momentum holography by utilizing strong orbital angular momentum selectivity offered by meta-holograms consisting of GaN nanopillars with discrete spatial frequency distributions. The reported orbital angular momentum-multiplexing allows lensless reconstruction of a range of distinctive orbital angular momentum-dependent holographic images. The results pave the way to the realization of ultrahigh-capacity holographic devices harnessing the previously inaccessible orbital angular momentum multiplexing.
Controlling light properties with diffractive planar elements requires full-polarization channels and accurate reconstruction of optical signal for real applications. Here, we present a general method that enables wavefront shaping with arbitrary output polarization by encoding both phase and polarization information into pixelated metasurfaces. We apply this concept to convert an input plane wave with linear polarization to a holographic image with arbitrary spatial output polarization. A vectorial ptychography technique is introduced for mapping the Jones matrix to monitor the reconstructed metasurface output field and to compute the full polarization properties of the vectorial far field patterns, confirming that pixelated interfaces can deflect vectorial images to desired directions for accurate targeting and wavefront shaping. Multiplexing pixelated deflectors that address different polarizations have been integrated into a shared aperture to display several arbitrary polarized images, leading to promising new applications in vector beam generation, full color display and augmented/ virtual reality imaging.
Hall effect and capacitance-voltage C(V) measurements were performed on p-type GaN:Mg layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping concentrations. The free hole density and the effective dopant concentration NA−ND as a function of magnesium incorporation measured by secondary ion mass spectroscopy clearly reveal both a magnesium doping efficiency up to 90% and a strong dependence of the acceptor ionization energy Ea with the acceptor concentration NA. These experimental observations highlight an isolated acceptor binding energy of 245±25 meV compatible, at high acceptor concentration, with the achievement of p-type GaN:Mg layers with a hole concentration at room temperature close to 1019 cm−3.
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