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Mn ions were implanted in p-type cubic GaN at doses from 0.6 to 2.4×1016cm−2 at 200 keV energy. A 200-nm-thick epitaxial layer, grown by molecular beam epitaxy on GaAs(001) substrate, is used for the Mn implantation. The Mn implanted samples were subjected to an annealing at 950 °C for 1–5 min. The structural quality of the samples was investigated by high resolution x-ray diffraction and Raman spectroscopy. The annealing procedure leads to a significant increasing of the crystalline quality of the samples. Hysteresis loops were observed for all cubic GaMnN annealed samples and ferromagnetism was detected up to room temperature.

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The radio-frequency plasma-assisted molecular beam epitaxy of cubic AlyGa1−yN/GaN heterostructures on GaAs(001) substrates is reported. Rutherford backscattering spectroscopy, high resolution x-ray diffraction, and first-order micro-Raman spectroscopy measurements were used to characterize the structural and vibrational properties of the alloy epilayers. The Al content of the alloy is in the range from 0.07<x<0.20. X-ray diffraction reciprocal space maps demonstrate the good crystal quality of the cubic (Al, Ga)N/GaN films. The measured Raman shift of the TO phonon mode of the AlyGa1−yN alloy is in good agreement with theoretical calculations.

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